Siemens BAT68-07W Datasheet
BAT 68-07W
Semiconductor Group
Sep-09-19981
Silicon Schottky Diodes
• For mixer applications in the VHF / UHF range
• For high-speed switching applications
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAT 68-07W 87 Q62702-A1200 1 = C1 2 = C2 SOT-3433 = A2 4 = A1
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
8 V
Forward current
I
F
130 mA
Total power dissipation,
T
S
= 89 °C
P
tot
150 mW
Junction temperature
T
j
150 °C
Operating temperature range °C-65...+150
T
op
Storage temperature
T
st
g
- 65 ...+150 °C
Maximum Ratings
Junction - ambient
1)
R
thJA
≤ 570
K/W
Junction - soldering point
R
thJS
≤ 410
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm
Semiconductor Group 1 1998-11-01
BAT 68-07W
Semiconductor Group
Sep-09-19982
Electrical Characteristics at
T
A
= 25 °C, unless otherwise specified.
Parameter
ValuesSymbol Unit
max.min. typ.
DC characteristics
V
(BR)
8Breakdown voltage
I
(BR)
= 10 µA
-- V
I
R
µA-Reverse current
V
R
= 1 V
0.1-
Reverse current
V
R
= 1 V,
T
A
= 60 °C
I
R
- - 1.2 nA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
-
340
318
390
340
500
mV
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
C
T
- - 1 pF
Differential forward resistance
I
F
= 5 mA, f = 10 kHz
r
f
- - 10
Ω
Semiconductor Group 2 1998-11-01
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