BAT 68-03W
Silicon Schottky Diode
Preliminary data
• For mixer applications in the VHF/UHF range
• For high speed switching
Type Marking Ordering Code Pin Configuration Package
BAT 68-03WK Q62702- 1 = A 2 = K SOD-323
Q62702-A1046
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Total Power dissipation
T
= 95 °C
S
Junction temperature
Operating temperature range
Storage temperature
V
I
P
T
T
T
F
R
tot
j
op
stg
8 V
130 mA
mW
150
150 °C
- 65 ... + 150
- 65 ... + 150
Thermal Resistance
Junction ambient
Junction - soldering point
1)
R
R
thJA
thJS
445 K/W
365
Semiconductor Group 1 Mar-04-1996
BAT 68-03W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
= 10 µA
(BR)
Reverse current
V
= 1 V,
R
V
= 1 V,
R
T
= 25 °C
A
T
= 60 °C
A
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
Diode capacitance
V
= 0 , f = 1 MHz
R
Differential forward resistance
V
I
V
C
R
R
(BR)
F
T
F
8 - -
-
-
340
-
-
318
390
0.1
1.2
340
500
- - 1
V
µA
mV
pF
Ω
I
= 5 mA
F
Forward current
I
F
= f (
T
*;
T
)
A
S
*): mounted on alumina 15mm x 16.7mm x 0.7mm
200
mA
160
I
F
140
120
100
80
60
40
T
T
A
S
- - 10
20
0
0 20 40 60 80 100 120 °C 150
TA,T
S
Semiconductor Group 2 Mar-04-1996
BAT 68-03W
Permissible Pulse Load
3
10
K/W
R
thJS
2
10
1
10
R
THJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
= f(
t
)
p
Permissible Pulse Load
I
Fmax
/
I
FDC
= f(
t
)
p
2
10
I
/
I
FDC
10
-
D = 0
0.005
0.01
0.02
1
0.05
0.1
0.2
0.5
Fmax
0
10
-7
10
-6
10
Forward Current
10
I
-5
F
10
= f(
0
-4
-3
-2
-1
10
10
10
t
V
) Reverse current
F
0
10
s
p
10
10
-7
10
-6
-5
-4
-3
-2
-1
10
I
= f (
R
10
10
10
10
t
T
)
A
0
10
s
p
Semiconductor Group 3 Mar-04-1996
BAT 68-03W
Diode capacitance
f
= 1MHz
C
= f (
T
V
)
R
Differential forward resistance
f
= 10kHz
r
= f(
f
I
)
F
Semiconductor Group 4 Mar-04-1996
BAT 68-03W
Package
Semiconductor Group
5 Mar-04-1996
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