Siemens BAT66-05 Datasheet

Silicon Schottky Diode BAT 66-05

Preliminary Data

● Low-power Schottky rectifier diode

● For low-loss, fast-recovery rectification, meter

protection, bias isolation and clamping purposes

Type Ordering Code

Marking

Pin Configuration

Package

1)

(tape and reel)

BAT 66-05 Q62702-A988BAT 66-05 SOT-223

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage V

R 40 V

Forward current IF 2A
Average forward current, 50 Hz IFAV 1
Surge forward current, t≤ 10 ms IFSM 10
Total power dissipation, T

S ≤ 126 ˚C Ptot 1.2 W

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 55 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 160 K/W

Junction - soldering point Rth JS ≤ 20

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I
I
I

A = 25 ˚C, unless otherwise specified.

at T

BAT 66-05

Parameter Symbol

Reverse current

R = 25 V

V

R = 25 V, TA = 85 ˚C

V

R

I

VF

F = 10 mA
F = 100 mA
F = 1 A

C

T –3040

R = 10 V, f = 1 MHz

V

min. typ. max.

–
–

–
–
–

–
–

0.28

0.35

0.47

10
1

0.35
–

0.60

UnitValues

µA

mA
VForward voltage

pFDiode capacitance

Forward current IF = f (VF) Reverse current IR = f (VR)

Semiconductor Group 2