Siemens BAT65 Datasheet
Semiconductor Group 1 05.96
Silicon Schottky Diode BAT 65
Type Marking Ordering Code Pin Configuration Package
1)
12
BAT 65 White/C Q62702-A990 C A SOD-123
1)
Dimensions see page 313.
Maximum Ratings
Parameter Symbol Limit Values Unit
Reverse voltage
V
R
40 V
Forward current I
F
750 mA
Average forward current, f = 50 Hz I
FAV
500 mA
Surage forward current, t ≤ 10 ms I
FSM
2.5 A
Total power dissipation, TS≤ 100 °C P
tot
600 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
− 55 … + 150 °C
Features
• Low-power Schottky rectifier diode
• For low-loss, fast-recovery rectification,
meter protection, bias isolation and
clamping purposes
• Miniature plastic package for surface
mounting (SMD)
BAT 65
Semiconductor Group 2
Thermal Resistance
Parameter Symbol Limit Values Unit
Junction - soldering point
R
thJS
≤ 80 K/W
Junction to ambient
1)
R
thJA
≤ 150 K/W
1)
Package mounted on epoxy PCB 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Electrical Characteristics
T
A
= 25 °C, unless otherwise specified.
Parameter Symbol Limit Values Unit
min. typ. max.
Reverse current
V
R
= 30 V
V
R
= 30 V, TA = 65 °C
I
R
–
–
–
–
50
900
µA
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 250 mA
I
F
= 750 mA
V
F
–
–
–
–
0.305
0.38
0.44
0.580
0.40
–
0.70
–
V
Diode capacitance
V
R
= 10 V, f = 1 MHz
C
T
– 8.4 12
pF
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