Siemens BAT64-07W Datasheet
BAT 64-07W
Semiconductor Group
Sep-07-19981
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code PackagePin Configuration
4 = A1BAT 64-07W 67s Q62702-A3470 1 = C1 2 = C2 SOT-3433 = A2
Maximum Ratings
Value
UnitParameter Symbol
Diode reverse voltage V40
V
R
250Forward current mA
I
F
120Average forward current (50/60Hz, sinus)
I
FAV
Surge forward current (t< 100µs)
I
FSM
800
250 mW
Total power dissipation,
T
S
≤ 104 °C
P
tot
°C
T
j
Junction temperature 150
Storage temperature
T
stg
-55...+150
Thermal Resistance
Junction - ambient
1)
≤455
K/W
R
thJA
R
thJS
≤185
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 1998-11-01
BAT 64-07W
Semiconductor Group
Sep-07-19982
Electrical Characteristics at
T
A
= 25 °C, unless otherwise specified.
Unit
ValuesSymbolParameter
typ. max.min.
DC characteristics
2-
I
R
Reverse current
V
R
= 30 V
µA-
200Reverse current
V
R
= 30 V,
T
A
= 85 °C
I
R
--
350
430
520
750
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
-
-
-
-
V
F
mV
320
385
440
570
AC characteristics
pF
Diode capacitance
V
R
= 1 V, f = 1 MHz
- 4
C
T
6
Forward current
I
F
= f (
V
F
)
T
A
= Parameter
10
10
10
0 0.5
1
BAT 64... EHB00057
V
F
Ι
F
V
10
10
2
1
0
-1
-2
mA
A
T
= -40
25
85
125
C
C
C
C
Reverse current
I
R
= f (
V
R
)
T
A
= Parameter
10
10
10
0102030
BAT 64... EHB00058
V
R
Ι
R
V
10
µ
A
10
10
A
T
= 125
85
25
2
1
0
-1
-2
-3
C
C
C
Semiconductor Group 2 1998-11-01
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