Siemens BAT64-07 Datasheet
BAT 64-07
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 64-07 67s Q62702-A964 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Average forward current (50/60Hz, sinus)
Surge forward current (t
≤ 10
ms)
Total Power dissipation
T
= 61 °C
S
Junction temperature
Storage temperature
V
R
I
F
I
FAV
I
FSM
P
tot
T
j
T
stg
40 V
250 mA
120
800
mW
250
150 °C
- 55 ... + 150
Thermal Resistance
Junction ambient
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
1)
R
R
thJA
thJS
≤
495 K/W
≤
355
Semiconductor Group 1 Jun-27-1996
BAT 64-07
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 25 V,
R
V
= 25 V,
R
T
= 25 °C
A
T
= 85 °C
A
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 30 mA
F
I
= 100 mA
F
I
V
R
-
-
F
-
-
-
-
-
-
320
385
440
570
2
200
350 mV
430
520
750
µA
V
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
C
T
pF
- 4 6
Semiconductor Group 2 Jun-27-1996
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