Siemens BAT64-06, BAT64-05, BAT64-04, BAT64 Datasheet
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
Pin Configuration
BAT 64
BAT 64-04
BAT64-05 BAT64-06
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 64 63s Q62702-A879 1 = A 3 = C SOT-23
BAT 64-04 64s Q62702-A961 1 = A 2 = C 3 = C/A SOT-23
BAT 64-05 65s Q62702-A962 1 = A 2 = A 3 = C/C SOT-23
BAT 64-06 66s Q62702-A963 1 = C 2 = C 3 = A/A SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
V
I
R
F
40 V
250 mA
Average forward current (50/60Hz, sinus)
Surge forward current (t
≤ 10
ms)
Total Power dissipation
T
= 61 °C
S
Junction temperature
Storage temperature
I
FAV
I
FSM
P
tot
T
j
T
stg
120
800
mW
250
150 °C
- 55 ... + 150
Thermal Resistance
Junction ambient
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
1)
R
R
thJA
thJS
≤
495 K/W
≤ 355
Semiconductor Group 1 Jan-31-1997
BAT 64
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 25 V,
R
V
= 25 V,
R
T
= 25 °C
A
T
= 85 °C
A
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 30 mA
F
I
= 100 mA
F
I
V
R
-
-
F
-
-
-
-
-
-
320
385
440
570
2
200
350 mV
430
520
750
µA
V
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
C
T
pF
- 4 6
Forward Current
I
= f(
F
V
) Reverse current
F
T
= Parameter
A
I
= f (
R
V
)
R
Semiconductor Group 2 Jan-31-1997
Loading...