Siemens BAT63-099R Datasheet
BAT 63-099R
Silicon Schottky Diodes
• Zero bias diode array for mixer and detectors up to
GHz frequencies
• Crossover ring quad
Type Marking Ordering Code Pin Configuration Package
BAT 63-099RSN Q62702-A1105 1 = A 2 = C SOT-143
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Total power dissipation, BAT17W
T
≤ 97°C
A
Total power dissipation, BAT17-04...06W
Junction temperature
Operating temperature range
Storage temperature
T
≤ 92°C
S
V
I
P
P
T
T
T
F
R
tot
tot
j
op
stg
40 V
40 mA
mW
150 °C
- 55 ... + 150
Thermal Resistance
Junction - ambient, BAT17W
Junction - ambient, BAT17-04W...06W
Junction - soldering poin, BAT17W
Junction - soldering point, BAT17-04W...06W
R
R
R
R
thJA
thJA
thJS
thJS
K/W
Semiconductor Group 1 Feb-01-1996
BAT 63-099R
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
= 100 µA
(BR)
Reverse current
V
= 40 V,
R
T
= 25 °C
A
Forward voltage
I
= 2 mA
F
Diode capacitance
V
= 0 , f = 1 MHz
R
Differential forward resistance
I
= 5 mA, f = 100 MHz
F
V
I
V
C
R
R
(BR)
F
T
F
V
µA
- - 10
V
- 0.85 1
pF
- 0.35 0.6
OHM
Semiconductor Group 2 Feb-01-1996
Loading...