Siemens BAT62-07W Datasheet
BAT 62-07W
Semiconductor Group
Sep-07-19981
Silicon Schottky Diode
• Low barrier diode for detectors up to GHz
frequencies
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type Marking Ordering Code PackagePin Configuration
4=A1Q62702-A1198BAT 62-07W 1=C1 2=C2 3=A2 SOT-34362s
Maximum Ratings
Parameter Symbol UnitValue
V
R
40Diode reverse voltage V
20 mA
I
F
Forward current
Total power dissipation,
T
S
= 103 °C
P
tot
100 mW
150 °C
T
j
Junction temperature
Storage temperature
T
st
g
-55 ...+150
Thermal Resistance
K/W
R
thJA
≤ 630
Junction - ambient
1)
Junction - soldering point
R
thJS
≤ 470
Semiconductor Group 1 1998-11-01
BAT 62-07W
Semiconductor Group
Sep-07-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol UnitValues
typ. max.min.
DC characteristics
10 µA--
I
R
Reverse current
V
R
= 40 V
V
F
- 0.58 1 VForward voltage
I
F
= 2 mA
AC characteristics
pF
C
T
Diode capacitance
V
R
= 0 V, f = 1 MHz
- 0.60.35
- 0.1Case capacitance
f
= 1 MHz
-
C
C
225 -
kΩ
-
R
0
Differential resistance
V
R
= 0 , f = 10 kHz
2Series inductance chip to ground
L
s
- nH-
Semiconductor Group 2 1998-11-01
Loading...