Siemens BAT62-03W Datasheet
BAT 62-03W
Silicon Schottky Diode
• Low Barrier diode for detectors up to GHz frequencies
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 62-03WL Q62702-A1028 1 = A 2 = C SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Junction temperature
Storage temperature
Total power dissipation
T
≤ 85°C
S
V
I
T
T
P
F
R
j
stg
tot
40 V
40 mA
150 °C
- 55 ... + 150
100 mW
Thermal Resistance
Junction ambient
Junction - soldering point
1)
R
R
thJA
thJS
≤ 650 K/W
≤
810
1) Package mounted on epoxy pcb 15mm x 16.7mmm x 0.7mm
Semiconductor Group 1 Mar-07-1996
BAT 62-03W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 40 V,
R
T
= 25 °C
A
Forward voltage
I
= 2 mA
F
I
V
R
µA
- - 10
F
V
- 0.58 1
AC Characteristics
Diode capacitance
V
= 0 , f = 1 MHz
R
Case capacitance
f
= 1 MHz
Differential resistance
V
= 0 , f = 10 kHz
R
Series inductance chip to ground
C
C
R
L
T
pF
- 0.35 0.6
C
- 0.1 -
Ω
0
k
- 225 -
s
- 2 - nH
Semiconductor Group 2 Mar-07-1996
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