Siemens BAT62-02W Datasheet
BAT 62-02W
Semiconductor Group
Jul-02-19981
Silicon Schottky Diode
• Low barrier diode for detectors up to GHz
frequencies
1
VES05991
2
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type Marking Ordering Code Pin Configuration Package
BAT 62-02W L Q62702-A1028 1 = C 2 = A SCD-80
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
40 V
Forward current
I
F
40 mA
Junction temperature
T
j
150 °C
Storage temperature
T
st
g
-55 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
≤ 650
K/W
Junction - soldering point
R
thJS
≤ 810
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
BAT 62-02W
Semiconductor Group
Jul-02-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 40 V
I
R
- - 10 µA
Forward voltage
I
F
= 2 mA
V
F
- 0.58 1 V
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
C
T
- 0.35 0.6 pF
Case capacitance
f
= 1 MHz
C
C
- 0.09 -
Differential resistance
V
R
= 0 , f = 10 kHz
R
0
- 225 -
kΩ
Series inductance chip to ground
L
s
- 0.6 - nH
Semiconductor Group 2 1998-11-01
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