Siemens BAT62 Datasheet

Silicon Schottky Diode BAT 62

● Low barrier diode for detectors up to GHz

frequencies.

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAT 62 Q62702-A97162

SOT-143

Maximum Ratings per Diode
Parameter Symbol Values Unit

Reverse voltage V

R 40 V

Forward current IF 20 mA
Total power dissipation, T

S ≤ 85 ˚C Ptot 100 mW

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 55 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 810 K/W

1)

Junction - soldering point Rth JS ≤ 650

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

Semiconductor Group 1

02.96

Electrical Characteristics per Diode

I

A = 25 ˚C, unless otherwise specified.

at T

BAT 62

Parameter Symbol

Reverse current

R = 40 V

V

Forward voltage

F = 2 mA

Diode capacitance

R = 0, f = 1 MHz

V

I

V

C

Case capacitance C
Differential resistance

R = 0, f = 10 kHz

V

R

min. typ.

R µA––10

F V– 0.58 1

T pF– 0.35 0.6

C – 0.1 –

0 kΩ– 225 –

max.

Series inductance LS nH–2–

UnitValues

Forward current IF = f (VF) Forward current IF = f (TS; TA*)

*Package mounted on alumina

Semiconductor Group 2