Siemens BAT60B Datasheet
BAT 60B
Semiconductor Group
Sep-04-19981
Silicon Schottky Diode
• Rectifier Schottky diode for mobile communication
• Low voltage high inductane
• For power supply
• For clamping and proptection in low voltage
application
• For detection and step-up-conversion
VPS05176
1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAT 60B blue/5 Q62702-A1189 1 = C 2 = A SOD-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
10 V
Forward current
I
F
3 A
Surge forward current (t< 100µs)
I
FSM
5 mA
Total power dissipation,
T
S
= 28 °C
P
tot
1350 mW
Junction temperature
T
j
150 °C
Storage temperature
T
st
g
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
≤ 160
K/W
Junction - soldering point
R
thJS
≤ 90
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAT 60B
Semiconductor Group
Sep-04-19982
Electrical Characteristics at
T
A
= 25 °C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 5 V
V
R
= 8 V
-
-
-
-
µA
5
10
I
R
Reverse current
V
R
= 5 V,
T
A
= 80 °C
V
R
= 8 V,
T
A
= 80 °C
I
R
-
-
100
410
-
-
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1000 mA
V
F
-
-
-
0.24
0.3
0.4
-
-
-
V
AC characteristics
C
T
- 20 - pFDiode capacitance
V
R
= 5 V, f = 1 MHz
Semiconductor Group 2 1998-11-01
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