Siemens BAT32 Datasheet

Silicon Schottky Diode BAT 32

● RF detector

● Low-power mixer

● Zero bias

● Very low capacitance

● For frequencies up to 18 GHz

● HiRel/Mil-tested diodes available

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

BAT 32 Q62702-A826… 18 (X, Ku) Cerec-X

Frequency
band (GHz)

Marking

32

(tape and reel)

Pin Configuration

Package

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage VR 6.5 V
Forward current I
Junction temperature Tj 150
Storage temperature range T
Operating temperature range T

F 50 mA

˚C

stg – 55 … + 150
op – 55 … + 150

1)

1)

For detailed information see chapter Package Outlines.

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BAT 32

Parameter Symbol

Breakdown voltage

R = 1 mA

I

Forward voltage

I

F = 1 mA
F = 10 mA

I

Diode capacitance

R = 0.15 V, f= 1 MHz

V

Differential resistance

F = 0, f= 10 kHz

V

V

(BR) V6.5 – –

F

V

C

T pF– 0.20 0.24

Ro kΩ–15–

min. typ.

–
–

0.2

0.6

UnitValues

max.

–
–

Forward current IF = f (VF)