BAT 240A
Semiconductor Group
Sep-09-19981
Silicon Schottky Diode
Preliminary data
• Rectifier Schottky diode for modem applications
• High reverse voltage
• For power supply
• For clamping and protection in all
high voltage applications
1
2
3
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAT 240A 4Ms Q62702-A1234 1=C1/A2 2 = C2 SOT-233 = A1
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
240 V
Peak reverse voltage
V
RM
V250
Forward current
I
F
400 mA
Surge forward current (t ≤ 10ms)
I
1 A
Total power dissipation,
T
S
= 28 °C
P
tot
400 mW
Junction temperature
T
80 °C
Storage temperature
T
st
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
≤ 465
K/W
Junction - soldering point
R
thJS
≤ 305
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAT 240A
Semiconductor Group
Sep-09-19982
Electrical Characteristics at
T
A
= 25 °C, unless otherwise specified.
Parameter
Symbol UnitValues
typ. max.min.
DC characteristics
Breakdown voltage
I
(BR)
= 500 µA
V
(BR)
240 - V-
Reverse current
V
R
= 200 V
V
R
= 240
I
R
-
-
5
-
-
50
µA
Forward voltage
I
F
= 10 mA
I
F
= 20 mA
I
F
= 50 mA
V
F
-
-
-
0.325
0.37
0.47
-
-
-
V
AC characteristics
Diode capacitance
V
R
= 10 V, f = 1 MHz
C
T
- 11.5 - pF
Semiconductor Group 2 1998-11-01