Siemens BAT18-06, BAT18-05, BAT18-04, BAT18 Datasheet

BAT 18

Silicon RF Switching Diode BAT 18 …

● Low-loss VHF/UHF switch above 10 MHz

● Pin diode with low forward resistance

Type Ordering CodeMarking

Pin Configuration

Package

BAT 18 Q62702-A787A2 SOT 23

BAT 18-04 Q62702-A938AU

BAT 18-05 Q62702-A940AS

BAT 18-06 Q62702-A942AT

Maximum Ratings per Diode
Parameter Symbol Values Unit

Reverse voltage V

R 35 V

1)

Forward current IF 100 mA
Operating and

storage temperature range

op

T
Tstg

– 55 … + 150 ˚C

Thermal Resistance

Junction - ambient R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

Semiconductor Group 1

th JA ≤ 450 K/W

07.94

Electrical Characteristics per Diode

I

I

A = 25 ˚C, unless otherwise specified.

at T

BAT 18...

Parameter Symbol

Forward voltage

F = 100 mA

Reverse current

R = 20 V

V

R = 20 V, TA = 60 ˚C

V

Diode capacitance

R = 20 V, f = 1 MHz

V

Forward resistance

F = 5 mA, f = 100 MHz

min. typ.

V

F V– 0.38 1.2

R nA

I

–
–

C

T pF– 0.75 1

r

f Ω– 0.4 0.7

–
–

max.

20
200

Series inductance LS nH–2–

UnitValues

Diode capacitance CT = f (VR)

f = 1 MHz

Forward resistance rf = f (IF)

f = 100 MHz

Semiconductor Group 2