Siemens BAT17W, BAT17-06W, BAT17-05W, BAT17-04W Datasheet
BAT 17W
Semiconductor Group
Sep-04-19981
Silicon Schottky Diodes
• For mixer applications in the VHF / UHF range
• For high-speed switching applications
1
3
VSO05561
2
BAT 17-05W
BAT 17-06WBAT 17W BAT 17-04W
Type Marking Ordering Code Pin Configuration Package
BAT 17W
BAT 17-04W
BAT 17-05W
BAT 17-06W
53s
54s
55s
56s
Q62702-A1271
Q62702-A1272
Q62702-A1273
Q62702-A1274
1 = A
1 = A1
1 = A1
3 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
SOT-3233 = C
3 = C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
4 V
Forward current
I
F
130 mA
Total power dissipation 1) BAT 17W,
T
A
≤ 97 °C
P
tot
150 mW
BAT 17-04W, -05W, -06W ,
T
S
≤ 92 °
C
P
tot
150
Junction temperature
T
j
150 °C
Operating temperature range
T
op
- 55 ...+150
Storage temperature
T
st
g
- 55 ...+150
Thermal Resistance
Junction - ambient 1) BAT 17W
R
thJA
≤ 435
K/W
Junction - ambient 1) BAS 17-04W ...
R
thJA
≤ 550
Junction - soldering point BAT 17W
R
thJS
≤ 355
Junction - soldering point BAT 17-04W ...
R
thJS
≤ 390
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
Semiconductor Group 1 1998-11-01
BAT 17W
Semiconductor Group
Sep-04-19982
Electrical Characteristics at
T
A
= 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
(BR)
= 10 µA
V
(BR)
4 - - V
Reverse current
V
R
= 3 V
V
R
= 4 V
I
R
-
-
-
-
0.25
10
µA
Reverse current
V
R
= 3 V,
T
A
= 60 °C
I
R
- - 1.25 nA
Forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
V
F
200
250
350
275
340
425
350
450
600
mV
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
C
T
0.4 0.55 0.75 pF
Differential forward resistance
I
F
= 5 mA, f = 100 kHz
r
f
- 8 15
Ω
Semiconductor Group 2 1998-11-01
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