Siemens BAT165 Datasheet
BAT 165
Semiconductor Group
Sep-04-19981
Silicon Schottky Diode
Preliminary data
• Low-power Schottky rectifier diode
• Miniature plastic package for surface
mounting (SMD)
VPS05176
1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAT 165 White/C Q62702-A1190 1 = C 2 = A SOD-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
40 V
Forward current
I
F
750 mA
Average forward current (50/60Hz, sinus)
I
FAV
500
Surge forward current (t< 100µs)
I
FSM
2.5 A
Total power dissipation,
T
S
= 66 °C
P
tot
600 mW
Junction temperature
T
j
150 °C
Storage temperature
T
st
g
- 65 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
≤ 275
K/W
Junction - soldering point
R
thJS
≤ 140
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAT 165
Semiconductor Group
Sep-04-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Values UnitSymbol
typ.min. max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
- - 50 µA
Reverse current
V
R
= 30 V,
T
A
= 65 °C
-
I
R
- 900 nA
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 250 mA
I
F
= 750 mA
V
F
-
-
-
-
0.305
0.38
0.44
0.58
0.4
-
0.7
-
V
AC characteristics
Diode capacitance
V
R
= 10 V, f = 1 MHz
C
T
- 8.4 12 pF
Semiconductor Group 2 1998-11-01
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