HiRel
Silicon Schottky Diode BAT 14
Features
HiRel Discrete and Microwave Semiconductor
¥
¥ Medium barrier diodes for detector and mixer
applications
¥ Hermetically sealed microwave package
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5106/014
ESD: E lectro s tatic d ischarge sensitive device,
observe handling precautions!
T
T1
Type Marking Ordering Code Pin Configuration Package
BAT 14-013 (ql)
BAT 14-014 (ql)
BAT 14-033 (ql)
BAT 14-034 (ql)
BAT 14-043 (ql)
BAT 14-044 (ql)
BAT 14-063 (ql)
BAT 14-064 (ql)
BAT 14-073 (ql)
BAT 14-074 (ql)
BAT 14-093 (ql)
BAT 14-094 (ql)
BAT 14-103 (ql)
BAT 14-104 (ql)
BAT 14-113 (ql)
BAT 14-114 (ql)
BAT 14-123 (ql)
BAT 14-124 (ql)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
see below T
see below see BAT14-013 T1
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see below
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
see BAT14-013
T
T1
T
T1
T
T1
T
T1
T
T1
T
T1
T
T1
T
T1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702D1346
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702D1345
Chapter Order Instructions for ordering example)
(see
Semiconductor Group 1 Draft A03 1998-04-01
BAT 14
Table 1 Maximum Ratings
Parameter Symbol Limit Values Unit
Reverse voltage
Forward current
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
Power dissipation
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
Operating temperature range
Storage temperature range
Soldering temperature
Burn-out energy
1)
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
V
I
P
T
T
T
E
F
R
tot
op
stg
sol
B
3V
mA
100
100
50
50
50
mW
100
100
50
50
50
55 to + 150
65 to + 175
+ 220
C
C
C
Erg
5.0
5.0
2.0
2.0
1.0
1)
Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General
criterion for burn-out energy is a 3 dB increase in noise figure.
Semiconductor Group 2 Draft A03 1998-04-01
Electrical Characteristics
BAT 14
Table 2 DC Characteristics at
T
= 25 ° C unless otherwise specified
A
Parameter Symbol Limit Values Unit
min. typ. max.
Breakdown voltage
I
= 10 m A
R
Reverse current
V
= 2 V
R
Forward voltage 1
I
= 0.01 mA
F1
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
Forward voltage 2
I
= 1 mA
F2
BAT14-013, -014, -033, -034
BAT14-043, -044, -063, -064
BAT14-073, -074, -093, -094
BAT14-103, -104, -113, -114
BAT14-123, -124
Series resistance
I
= 10 mA,
F1
2)
I
= 50 mA
F2
BAT14-013, -014
BAT14-033, -034
BAT14-043, -044
BAT14-063, -064
BAT14-073, -074
BAT14-093, -094
BAT14-103, -104
BAT14-113, -114
BAT14-123, -124
V
I
V
V
R
(BR)
R
F1
F2
F
-- V
-- 1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.42
0.44
0.45
0.46
0.48
3.0
4.0
3.5
4.5
4.5
5.5
6.0
7.0
8.0
A
V
0.31
0.32
0.33
0.35
0.36
V
0.44
0.45
0.46
0.48
0.50
W
3.5
4.5
4.0
5.0
5.5
6.5
7.0
8.0
9.0
DV
2)
R
F
-------------------------
40 10
Semiconductor Group 3 Draft A03 1998-04-01
F
W=
´
3Ð