Siemens BAT14-03W Datasheet
BAT 14-03W
Silicon Schottky Diode
• DBS mixer application to 12GHz
• Medium barrier type
• Low capacitance
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 14-03WO/white Q62702-A1103 1 = A 2 = C SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Total power dissipation
T
S
≤ 85°C
V
I
T
T
P
F
R
op
stg
tot
4 V
90 mA
- 55 ... + 125°C
- 55 ... + 150
100 mW
Thermal Resistance
Junction ambient
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
1)
R
R
thJA
thJS
≤ 450 K/W
≤
690
Semiconductor Group 1 Mar-01-1996
BAT 14-03W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
= 5 µA
(BR)
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
Diode capacitance
V
= 0 , f = 1 MHz
R
Differential forward resistance
I
10mA/ 50 mA
F
V
V
C
R
(BR)
F
T
F
4 - -
0.36
0.48
0.43
0.55
0.52
0.66
- 0.22 0.35
- 5.5 -
V
pF
Ω
Diode capacitance
f
= 1MHz
0.50
pF
0.40
C
T
0.35
0.30
0.25
0.20
0.15
0.10
0.05
CT = f (V
)
R
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V
R
Semiconductor Group 2 Mar-01-1996
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