Siemens BAT114-099R Datasheet
Silicon Crossover Ring Quad Schottky Diode BAT 114-099R
Features
• High barrier diode for double balanced mixers,
phase detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code
Pin Configuration Package
(taped)
BAT 114-099R 14s Q62702-A1006 SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter Symbol Limit Values Unit
Forward current I
Operation temperature
F
T
op
90 mA
− 55 to + 150 °C
1)
Storage temperature
Power dissipation,
Semiconductor Group 1 02.96
T
≤ 70 °C P
S
T
stg
tot
− 55 to + 150 °C
100 mW
BAT 114-099R
Thermal Resistance
(per diode)
Parameter Symbol Limit Values Unit
Junction to soldering point R
Junction to ambient
1)
Mounted on alumina 15 mm × 16.7 mm to 0.7 mm
1)
R
thJS
thJA
≤ 780 K/W
≤ 1020 K/W
Electrical Characteristics
(per diode;
T
= 25 °C)
A
Parameter Symbol Limit Values Unit
min. typ. max.
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
Forward voltage matching
I
= 10 mA
F
Diode capacitance
V
= 0 V, f = 1 MHz
R
Forward resistance
I
= 10 mA / 50 mA
F
1)
V
∆
C
R
V
F
−
−
F
0.58
0.68
0.7
0.78
V
mV
−−20
T
pF
− 0.25 −
F
Ω
− 5.5 −
1)
∆VF is difference between lowest and highest VF in component.
Semiconductor Group 2
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