Siemens BAR63-03W Datasheet
Silicon PIN Diode
l
PIN diode for high speed switching of RF signals
l
Low forward resistance
l
Very low capacitance
l
For frequencies up to 3 GHz
BAR 63-03W
Type Marking Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
BAR 63-03W G Q62702-A1025 A C SOD-323
Maximum Ratings
Parameter Symbol BAR 63-03W Unit
Reverse voltage
Forward current
Total Power dissipation TS ≤ 111°C
Operating temperature range
Storage temperature range
V
R 50 V
I
F
P
tot
T
op
T
stg
100 mA
250 mW
-55 +150°C °C
-55...+150°C °C
Thermal Resistance
Junction-ambient
Junction-soldering point
1)
R
R
th JA
th JS
≤ 235 K/W
≤ 155 K/W
1)
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 Edition A01, 22.07.94
BAR 63-03W
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
= 5 µA
R
Reverse leakage
V
= 20 V
R
Forward voltage
I
= 100 mA
F
Diode capacitance
V
= 0 V, f = 100 MHz
R
Diode capacitance
V
= 5 V, f = 1 MHz
R
Forward resistance
I
= 5 mA, f = 100 MHz
F
I
= 10 mA, f = 100 MHz
F
Charge carrier lifetime
I
= 10 mA,
F
I
= 6 mA,
R
Series inductance
I
= 3 mA
R
V
I
V
C
C
r
τ
L
R
f
L
s
(BR)
F
T
T
50 - -
--50
- 0.95 1.2
- 0.3 -
- 0.21 0.3
-
-
1.2
1
2
-
-75-
- 2.0 -
V
nA
V
pF
pF
Ω
ns
nH
Semiconductor Group 2 Edition A01, 22.07.94
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