Siemens BA887 Datasheet
Silicon PIN Diode
BA 887
Preliminary Data
● RF switch, RF attenuator for frequencies above
10 MHz
● Very low IM distortion
Type Ordering Code Pin Configuration Marking Package
(taped) 1 2 3
BA 887 Q62702- A C PDs SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage
Forward current
Total power dissipation
T
S
Junction temperature
Storage temperature range
≤ 40 °C
1)
V
I
P
T
T
R
F
tot
j
stg
50 V
100 mA
250 mW
150 °C
– 55 … + 150 °C
Thermal Resistance
Junction-soldering point
Junction-ambient
1)
R
R
th JS
th JA
≤ 220 K/W
≤ 300 K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
BA 887
Characteristics per Diode
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
Reverse current
V
=30V
R
Forward voltage
I
= 100 mA
F
Diode capacitance
V
=10V,f = 1 MHz
R
V
=0V,f = 100 MHz
R
Forward resistance
I
= 1.5 mA
F
I
=10mA
F
f = 100 MHz
Charge carrier lifetime
I
=10mA,IR= 6 mA, IR=3mA
F
Package Outline
SOT-23
I
V
C
r
τ
R
nA
––20
F
V
– 0.9 –
T
–
–
f
–
–
L
0.52
0.27
22
4.2
–
–
–
–
pF
Ω
µs
– 2.5 –
Loading...