Sharp S11ME5, S11ME6, S21ME6F, S21ME5, S21ME5F Datasheet

...
S11ME5/S11ME6/S21ME5/S21ME5F/S21ME6/S21ME6F
S11ME5/S11ME6/S21ME5F S21ME5/S21ME6/S21ME6F
Lead forming type (I type) of / S21ME5F/ S21ME6F / S21ME5FI/
are also available.
DIN-VDE0884 approved type is also available as an option.
Features
1. Internal isolation distance : 0.4mm or more
2. Creepage distance : 6.4mm or more
3. Clearance : 6.4mm or more
4. Recogized by UL file No. E64380 Approved by VDE (DIN-VDE0884 : No.76850 Approved by BSI (BS415 : No.6690, BS7002 : No.7421 Approved by SEMKO (No.9202227 Approved by DEMKO (No.107968
)
)
Approved by EI (No.152029-02,03,04,0116
5. Built-in zero-cross circuit
(S11ME6/S21ME6/S21ME6F
(
6. Wide forming type
S21ME5F,
(Distance between lead pins : 10.16 mm
7. High isolation voltage between input and
output (Viso : 5 000V
)
rms
)
)
)
S21ME6F
)
(
Outline Dimensions
S11ME5/S11ME6 S21ME5/S21ME6
0.3
±
±
1.2
)
)
Internal connection diagram
Phototriac Coupler Conformable to
European Safety Standard
)
S21ME6FI
S21ME5F/S21ME6F
0.3
Anode mark
0.9
0.25
S11ME5 S21ME5
6.5
7.62
0.26
θ
θ : 0 to 13˚
S11ME5/S21ME5/S21ME5F
±
±
0.5
±
0.3
MIN
2.7
±
0.1
2.54
4.58
±
0.5
±
0.5
3.4
4.58
0.3
0.3
±
±
1.2
0.9
±
0.5
0.5
±
3.5
0.5
±
0.1
0.5
S11ME6/S21ME6/S21ME6F
Anode mark
1
2
±
6.5
±
7.62
0.26
10.16
(
Unit : mm
4
0.5
0.25
±
±
2.54
4.58
3
0.5
0.3
±
±
0.5
4.58
MIN
2.7
0.1
3434
)
±
0.5
0.5
±
3.5
±
0.1
0.5
Applications
2
1. For triggering medium/high power triac
2. For detecting over voltage of switching
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Input
Forward current I Reverse voltage V RMS ON-state current I
Output
∗1Peak one cycle surge current I
Repetitive peak OFF-state voltage
3
Isolation voltage V
S11ME5/S11ME6
2
S21ME5 /S21ME6
Operating temperature T Storage temperature T
4
Soldering temperature T
1 50Hz sine wave 2 Also 3 40 to 60%RH, AC for 1 minute, f= 60Hz4 For 10 seconds
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
S21ME5F/ S21ME6F
F
R
T
surge
V
DRM
iso
opr
stg
sol
1 1 Anode 2 Cathode 3 Anode/
Cathode
4 Anode/
(
Ta = 25˚C
Cathode
50 mA
6V
100 mA
rms
1.2 A 400 600
5 000
V
V
rms
- 30 to +100 ˚C
- 55 to +125 ˚C 260 ˚C
12
Zero-cross circuit
)
S11ME5/S11ME6/S21ME5/S21ME5F/S21ME6/S21ME6F
Electro-optical Characteristics
Parameter Symbol MIN. TYP. MAX. Unit
Input
Output
Transfer
charac-
teristics
5 S11ME6, S21ME6, S21ME6F
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
)
rms
mA
(
T
RMS ON-state current I
Forward voltage V Reverse current I Repetitive peak OFF-state current ON-state voltage V Holding current I Critical rate of rise of OFF-state voltage
5
Zero-cross voltage V Minimum trigger current Isolation resistance Turn-on time
120
100
80
60
40
20
= 20mA
I
F
F
=3V
V
R
R
I
DRM
H
dV/dt
OX
I
FT
R
ISO
t
on
T
= Rated
V
DRM
= 100mA
I
T
=6V
V
D
V
=(1/ )• Rated
DRM
Resistance load, I
= 100, VD=6V
R
L
DC = 500V, 40 to 60% RH VD= 6V, RL= 100, IF= 20mA
Fig. 2 Forward Current vs.
Conditions
- 1.2 1.4 V
--10-5A
--10-6A
- - 2.5 V
0.1 - 3.5 mA
2
= 15mA
F
100 - - V/µs
- - 35 V
- - 10 mA
5x101010
- - 100 µs
Ambient Temperature
70
60
)
50
mA
(
F
40
30
20
Forward current I
10
(
Ta = 25˚C
11
-
)
0
-
30 0 20406080100
Ambient temperature Ta (˚C
)
Fig. 3 Forward Current vs. Forward Voltage
100
50
)
mA
(
F
Forward current I
Ta= 75˚C
50˚C
20
10
25˚C
5
2
1
0.9
1.0 1.1 1.2 1.3 1.4 1.5 Forward voltage VF (V
0˚C
-25˚C
)
0
-
30 0 25 75 100 125
Ambient temperature T
50
(˚C)
a
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
12
10
)
mA
(
8
FT
6
4
2
Minimum trigger current I
0
-
30
Ambient temperature Ta (˚C
S11ME5
S21ME5/5F
S11ME6 S21ME6/6F
V
D
R
L
)
=6V = 100
100806040200
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