Sharp S11MD7T, S11MD8T, S11MD9T, S21MD7T, S21MD8T Datasheet

S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T

S11MD7T/S11MD8T/S11MD9T
S21MD7T/S21MD8T/S21MD9T

❈ Taping reel type of S21MD8T is also available (S21MD8P)
❈ DIN-VDE0884 approved type is also available.

■ Features

1. Low input driving current
(

S11MD7T/ S11MD8T/ S21MD7T/ S21MD8T

IFT: MAX. 5mA
S11MD9T /S21MD9T I

: MAX.7mA

FT

2. Pin No. 5 completely molded for external

noise resistance

3. Built-in zero-cross circuit

4. High repetitive peak OFF-state voltage
(

S11MD7T / S11MD8T / S11MD9T

V

: MIN. 400V

DRM

(

S11MD8T/S21MD8T

S21MD7T / S21MD8T / S21MD9T

: MIN. 600V

V

DRM

5. Isolation voltage between input and output
(

: 5 000V

V

iso rms

)

6. Recognized by UL, file No.E64380

■ Model Line-ups

100V line 200V line

No zero-cross
circuit

Built-in zero­cross circuit

S11MD7T/

S11MD9T
S11MD8T S21MD8T

S21MD7T/
S21MD9T

)

)

■ Outline Dimensions

Low Input Driving Type
Phototriac Coupler

Internal connection

diagram

46

S11MD8T

Anode
mark

123

±

0.25

2.54

±

7.12

0.5

±

3.35

∗ Zero-cross circuit for S11MD8T and S21MD8T

0.5

0.5

±

3.7

0.5

±

6.5

±

0.2

0.9

±

0.3

1.2

0.5

±

3.5

TYP.

0.5

±

0.1

0.5

1 Anode
2 Cathode
3 NC

123

7.62

0.26
θ : 0 to 13

46

±

0.3

±

0.1

4 Anode/

Cathode

6 Anode/

Cathode

(

Unit : mm

❈

Zero-cross
circuit

θ

˚

)

■ Applications

1. For triggering medium/high power triacs

■ Absolute Maximum Ratings

Parameter Symbol

Input

Forward current I
Reverse voltage V
RMS ON-state current I

Output

∗1

Peak one cycle surge current I

Repetitive peak OFF-state voltage V

∗2

Isolation voltage V
Operating temperature T
Storage temperture T

∗3

Soldering temperature T

∗1 50Hz Sine wave
∗2 40 to 60%RH, AC for 1 minute, f = 60Hz
∗3 For 10 seconds

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

S11MD7T/S11MD8T
S11MD9T

F

R

T

surge

DRM

iso

opr

stg

sol

Rating

S21MD7T/S21MD8T/
S21MD9T

50 mA

6V

0.1

1.2 A

400 600 V

5 000

- 30 to +100 ˚C

- 55 to +125 ˚C
260 ˚C

(

Ta= 25˚C

Unit

A

rms

V

rms

)

S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T

■ Electro-optical Characteristics

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Input

Output

Minimum trigger
current

Transfer

charac-

teristics

Forward voltage V
Reverse current I

Repetitive peak OFF-state current

S11MD7T/S21MD7T

ON-state voltage

S11MD9T/S21MD9T
S11MD8T/S21MD8T

Holding current I

Critical rate of rise of OFF-state voltage

Zere-cross voltage

S11MD8T/S21MD8T
S11MD7T/S21MD7T

S11MD8T/S21MD8T

S11MD9T/S21MD9T

Isolation resistance R

S11MD7T

Turn-on time

S11MD9T/S21MD7T/

S21MD9T

S11MD8T/S21MD8T

= 20mA - 1.2 1.4 V

FIF

RR

I

DRMVDRM

V

=3VV--10

= Rated - - 10

TIT

= 0.1A

- 1.5 2.5

- 1.7 2.5

VD= 6V 0.1 0.5 3.5 mA

H

V

dV/dt

V

OX F

I

FT

= 1/ • Rated 100 - - V/µs

2

DRM

= 10mAResistance load, I - - 35 V

VD= 6V, RL= 100Ω

--5

--7

DC500V, 40 to 60%RH

ISO

5x101010

11

- 70 100

VD= 6V, RL= 100Ω

t

on

= 20mA

I

F

-2050

(

Ta = 25˚C

-5

-6

mA

- Ω

)

A
A

V

µs- 60 100

Fig. 1 RMS ON-state Current vs.

Ambient Temperature

0.10

)

Arms

(

T

0.05

RMS ON-state current I

0

-

30 0 20406080100

Ambient temperature Ta (˚C

Fig. 2 Forward Current vs.

Ambient Temperature

70

60

)

50

mA

(

F

40

30

20

Forward current I

10

0

-

)

30 0 25 50 75 100 125

Ambient temperature Ta (˚C

)