Sharp PC364 Datasheet

PC364

PC364

■ Features

1. Low input current type (IF=±0.5mA)

2. AC input type

3. High resistance to noise due to high common mode rejection

voltage (CMR:MIN. 10kV/µs)

4. Mini-flat package

5. Isolation voltage (Viso:3 750Vrms)

6. Recognized by UL, file No. 64380

■ Applications

1. Programmable controllers

2. Facsimiles

3. Telephones

■ Rank Table

Model No. Rank mark Ic (mA) Conditions

PC364N
PC364N1

A or no mark

A

0.25 to 2.0

0.5 to 1.5

■ Absolute Maximum Ratings

Parameter Symbol Rating Unit

Forward current

*1

Input

Peak forward current
Power dissipation
Collector-emitter voltage

Output

Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature

*2

Isolation voltage

*3

Soldering temperature

*1 Pulse width<=100µs, Duty ratio=0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s

IF

IFM

P 15

VCEO

ECO

V

IC

PC

tot

P

−30 to +100

Topr

−40 to +125

T

stg

Viso kVrms
Tsol

±10

±200

70

6

50
150
170

3.75
260

IF=±0.5mA

V

CE=5V

T

a=25°C

(Ta=25°C)

mA
mA

mW

V
V

mA

mW
mW

°C
°C

°C

AC Input, Low Input Current
Type Photocoupler

■ Outline Dimensions

±0.3

3.6

±0.25

2.54

4 3

1 2

Anode mark

±0.2

2.6

±0.1

6°

0.1

1

2

3 6 4

Epoxy resin

Internal connection diagram

0.4

±0.2

±0.1

±0.05

4.4

0.2

4

1

AnodeAnode (Cathode)

2

Cathode (Anode)

3

Emitter

4

Collector

3

5.3

45°

7.0

±0.3

+0.2

−0.7

0.5

(Unit : mm)

+0.4

−0.2

0.2mm or more

Soldering area

Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/

PC364

■ Electro-optical Characteristics

Parameter Symbol
Forward voltage
Terminal capacitance

InputOutputTransfer characteristics

Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance

Response time

*4

Common mode rejection voltage

*4 Refer to Fig.1

Rise time
Fall time

F

V

Ct

ICEO
BVCEO
BVECO

IC

VCE (sat)

RISO

Cf

tr
tf

CMR

Ta=25°C, R

I

F=0mA, VCC=9V, Vnp=100mV

Conditions

I

F=±10mA

V=0, f=1kHz

CE=50V, IF=0

V

I

C=0.1mA, IF=0

I

E=10µA, IF=0

I

F=±0.5mA, VCE=5V

I

F=±10mA, IC=1mA

DC500V 40 to 60%RH

V=0, f=1MHz

V

CE=2V, IC=2mA, RL=100Ω

L=470Ω, VCM=1.5kV (peak),

Fig.1 Test Circuit for Common Mode Rejection Voltage

V

CC

R

L

V

O



V

High wave

CM :



V

CM

pulse



=470Ω

R

L



=9V



V

CC

V

CM

1)
V

cp

V

O

(V

Nearly = dV/dt×Cf×RL)

cp

1) V

: Voltage which is generated by displacement current in floating

cp

capacitance between primary and secondary side.

(dV/dt)

MIN.

−

−

−

70

6

0.25

−

5×10

−

−

−

10

TYP. MAX. Unit

1.2
30

−

−

−

−

−

10

1×10

11

0.6
4
3

−

V

250
100

np

1.4

2.0

0.2

1.0
18
18

−

−

−

−

(Ta=25°C)

V

pF
nA

V
V

mA

V

Ω

pF

µs
µs

kV/µs

Fig.2 Forward Current vs. Ambient

Temperature

10

(mA)

F

5

Forward current I

0

−30 0 25 50 75 100 125

Ambient temperature Ta (°C)

Fig.3

Diode Power Dissipation vs. Ambient
Temperature

15

10

5

Diode power dissipation P (mW)

0

−30 0 25 50 75 100 125

Ambient temperature Ta (°C)