Datasheet VN920SO, VN920-B513TR, VN920-B5, VN920 Datasheet (SGS Thomson Microelectronics)

®

May 2003 1/23

UNDERVOLTAGE

OVERTEMPERATURE

V

CC

GND

INPUT

OUTPUT

OVERVOLTAGE

CURRENT LIMITER

LOGIC

DRIVER

Power CLAMP

V

CC

CLAMP

VDS LIMITER

DETECTION

K

I

OUT CURRENT

SENSE

VN920

/ VN920- B5 / VN920 SO

SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY

■ CMOS COMPATIBLE INPUT

■ PROPORTIONAL LOAD CURRENT SENSE

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUTDOWN

■ CURRENT LIMITATION

■ PROTECTION AGAI NST LOSS OF GROUND

AND LOSS OF V

CC

■ VERY LOW ST AND -BY P OWER DI SSIPA TION

■ REVERSE BA TTERY PROTECTION (*)

DESCRIPTION

The VN920, VN920-B5, VN920SO is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to

ground. Active VCC pin voltage clamp protects the device a gainst low energy spi kes (see ISO7637

transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protect the device against overload. The device integrates an analog current sense output which delivers a current proportional to the load cu rren t. Device a utoma ti cally turn s off in case of ground pin disconnection.

TYPE R

DS(on)

I

OUT

V

CC

VN920 VN920-B5 VN920SO

16mΩ 30 A 36 V

PENTAWATT

P2PAK

SO-16L

ORDER CODE S

PACKAGE TUBE T&R

PENTAWATT

VN920

P2PAK VN920 -B5 VN920-B51 3TR SO-16L V N920 SO VN920SO13TR

BLOCK DIAGRAM

(*) See application schematic at page 8

2/23

VN920 / VN920-B5 / VN920SO

ABSOLUTE MAXIMUM RATI NG

CONNECTION DIAGRAM (TOP VIEW)

CURRENT AND VOLTAGE CONVENTIONS

Symbol Parameter

Value

Unit

PENTAWATT P

2

PAK SO-16L

V

CC

DC Supply Voltage 41 V

- V

CC

Reverse DC Supply Voltage - 0.3 V

- I

GND

DC Reverse Ground Pin Current - 200 mA

I

OUT

DC Output Current Internally Limited A

- I

OUT

Reverse DC Ou tput Current - 21 A

I

IN

DC Input Current +/- 10 mA

V

CSENSE

Current Sense Maximum Voltage -3

+15

V V

V

ESD

Electrostatic Discharge (Human Bo dy Model: R=1.5KΩ; C=100pF)

- INPUT

- CURRENT SENSE

- OUTPUT

- V

CC

4000 2000 5000 5000

V V V V

E

MAX

Maxim u m Sw itching Energy (L=0.25m H ; R

L

=0Ω; V

bat

=13.5V ; T

jstart

=150ºC ; IL=45A)

364 352 mJ

P

TOT

Power Diss ipation TC≤25°C 96.1 96.1 8.3 W

T

j

Junction Operating Temperature Internally limited °C

T

c

Case Operating Temperature - 40 to 150 °C

T

STG

Storage Temperat ure - 55 to 150 °C

1

5 4

3 2

1

V

CC

GND

INPUT

C

SENSE

OUTPUT

PENTAWATT

3 2 1

4

5

V

CC

GND

INPUT

C

SENSE

OUTPUT

P2PAK

I

S

I

GND

V

CC

V

CC

V

SENSE

OUTPUT

I

OUT

CURRENT SENSE

I

SENSE

INPUT

I

IN

V

IN

V

OUT

GND

V

CC

OUTPUT

V

CC

OUTPUT

V

CC

N.C.

C

SENSE

INPUT

V

CC

GND

N.C.

1

8

9

16

SO-16L

3/23

VN920 / VN920-B5 / VN920SO

THERMAL DATA

(*) When mounted on a standard single-sid ed FR-4 board with 0.5cm2 of Cu (at leas t 35µ m t hick) . (**) When mounted on a standa r d s ingle-sided FR-4 board with 0.5cm

2

of Cu (at least 35µm thick) connected to all VCC pins.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C unless otherwise specified) POWER

SWITCHING (VCC=13V)

LOGIC INPUT

Symbol Parameter

Value

Unit

PENTAWATT P

2

PAK SO-16L

R

thj-case

Thermal R esistance Junction- case Max 1.3 1.3 °C/W

R

thj-lead

Thermal Resistance Junction-lead Max 15 °C/W

R

thj-amb

Thermal Resistance Junction-ambient M ax 61.3 51.3 (*) 65 (**) °C/W

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

Operating Supply Voltage 5.5 13 36 V

V

USD

Undervoltage Shut-down 3 4 5.5 V

V

OV

Overvolt age Shut-down 36 V

R

ON

On State Resistance

I

OUT

=10A; Tj=25°C

I

OUT

=10A

I

OUT

=3A; VCC=6V

16 32 55

mΩ mΩ mΩ

V

clamp

Clam p Vo ltage ICC=20mA (See note 1) 41 48 55 V

I

S

Supply Current

Off State; V

CC

=13V; VIN=V

OUT

=0V

Off State; V

CC

=13V; VIN=V

OUT

=0V; Tj=25°C

On State; V

CC

=13V; VIN=5V; I

OUT

=0A;

R

SENSE

=3.9KΩ

10 10

25 20

5

µA µA

mA

I

L(off1)

Off State Output Curren t VIN=V

OUT

=0V 0 50 µA

I

L(off2)

Off State Output Curren t VIN=0V; V

OUT

=3.5V -75 0 µA

I

L(off3)

Off State Output Curren t VIN=V

OUT

=0V; Vcc=13V; Tj=125°C 5 µA

I

L(off4)

Off State Output Curren t VIN=V

OUT

=0V; Vcc=13V; Tj=25°C 3 µA

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

Turn-on Delay Time RL=1.3Ω (s ee figure 2) 50 µs

t

d(off)

Turn-off Dela y Ti me RL=1.3Ω (see figure 2) 50 µs

dV

OUT

/dt

(on)

Turn-on Voltage Sl ope RL=1.3Ω (s ee figure 2)

See

relative

diagram

V/µs

dV

OUT

/dt

(off)

Turn-off Voltage Slope RL=1.3Ω (see figure 2)

See

relative

diagram

V/µs

Symbol Parameter Test Co nditions Min Typ Max U nit

V

IL

Input Low Level 1.25 V

I

IL

Low Level Input Current VIN=1.25V 1 µA

V

IH

Input High Level 3.25 V

I

IH

High Level Input Current VIN=3.25V 10 µA

V

I(hyst)

Input Hyst eresis Voltage 0.5 V

V

ICL

Input Clamp Voltage

I

IN

=1mA

I

IN

=-1mA

66.8

-0.7

8V

V

1

Note 1: V

clamp

and VOV are correlated. Typical difference is 5V .

4/23

VN920 / VN920-B5 / VN920SO

1

ELECTRICAL CHARACTERISTICS (continued) CURRENT SENSE (9V≤ VCC≤16V) (See Fig. 1)

PROTECTIONS

Note 2: current sense signal delay after positive input sl ope

Note: sense pin doesn’t have to be left floating.

Symbol Parameter Test Conditions Min Typ Max Unit

K

1

I

OUT/ISENSE

I

OUT

=1A; V

SENSE

=0.5V;

T

j

= -40°C...150°C

3300 4400 6000

dK1/K1Current Se nse Ratio Drift

I

OUT

=1A; V

SENSE

=0.5V;

T

j

= -40°C...+150°C

-10 +10 %

K

2

I

OUT/ISENSE

I

OUT

=10A; V

SENSE

=4V; Tj=-40°C

T

j

=25°C... 150°C

4200 4400

4900 4900

6000 5750

dK2/K2Current Se nse Ratio Drift

I

OUT

=10A; V

SENSE

=4V;

T

j

=-40°C.. .+150°C

-8 +8 %

K

3

I

OUT/ISENSE

I

OUT

=30A; V

SENSE

=4V; Tj=-40°C

T

j

=25°C... 150°C

4200 4400

4900 4900

5500 5250

dK3/K3Current Se nse Ratio Drift

I

OUT

=30A; V

SENSE

=4V;

T

j

=-40°C.. .+150°C

-6 +6 %

I

SENSEO

Analog Sense Leakage Current

V

CC

=6...16V; I

OUT

=0A;V

SENSE

=0V;

T

j

=-40°C.. .+150°C

010µA

V

SENSE

Max Analog Sense Output Voltage

V

CC

=5.5V; I

OUT

=5A; R

SENSE

=10KΩ

V

CC

>8V; I

OUT

=10A; R

SENSE

=10KΩ

2 4

V V

V

SENSEH

Sense Voltage in Overtemperature conditions

VCC=13V; R

SENSE

=3.9KΩ 5.5 V

R

VSENSEH

Analog Sense Output Impedance in Overtemperature Condition

VCC=13V; Tj>T

TSD

; Output Open 400 Ω

t

DSENSE

Current sense delay response

to 90% I

SENSE

(see note 2) 500 µs

Symbol Parameter Test Conditions Min Typ Max Unit

T

TSD

Shut-down Temperature 150 175 200 °C

T

R

Reset Temperature 135 °C

T

hyst

Thermal Hysteresis 7 1 5 °C

I

lim

DC Short Circuit Current

V

CC

=13V

5V<V

CC

<36V

30 45 75

75

A A

V

demag

Turn-off Output Clamp Voltage

I

OUT

=2A; VIN=0V; L= 6m H VCC-41 VCC-48 VCC-55 V

V

ON

Output Voltage Drop Limitation

I

OUT

=1A; Tj=-40°C....+150°C 50 mV

5/23

VN920 / VN920-B5 / VN920SO

1

Figur e 2: Switching Characteristics (Resistive load RL=1.3Ω)

02468101214161820222426283032

3000

3500

4000

4500

5000

5500

6000

6500

min.Tj=-40°C

max.Tj=-40°C

min.Tj=25...150°C

max.Tj=25...150°C

typi cal value

Figure 1: I

OUT/ISENSE

versus I

OUT

I

OUT

(A)

I

OUT/ISENSE

V

OUT

dV

OUT

/dt

(on)

t

r

80%

10%

t

f

dV

OUT

/dt

(off)

I

SENSE

t

90%

t

d(off)

INPUT

t

90%

t

d(on)

t

DSENSE

6/23

VN920 / VN920-B5 / VN920SO

1

TRUTH TABLE

ELECTRICAL TRANS IENT REQUIREMENTS

CONDITIONS INPUT OUTPUT SENSE

Normal op eration

L

H

L

H

0

Nominal

Overtemperature

L

H

L L

0

V

SENSEH

Undervoltage

L

H

L L

0 0

Overvoltage

L

H

L L

0 0

Short circuit to GND

L H H

L L L

0

(T

j<TTSD

) 0

(T

j>TTSD

) V

SENSEH

Short circuit to V

CC

L H

H H

0

< Nominal

Negative output voltage clam p L L 0

ISO T/R 7637/1

Test Pulse

TEST LEVELS

I II III IV Delays and

Impedance

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -5 0 V - 100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0. 01

Ω

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

Ω

ISO T/R 7637/1

Test Pulse

TEST LEVELS RESULTS

I II III IV

1CCCC

2CCCC 3aCCCC 3bCCCC

4CCCC

5CEEE

CLASS CONTENTS

C All functions of the device are per formed as de signed after exposure to disturbance. E One or more functions of the device is not performed as d esigned after exposure to disturbance

and cann ot be returned to proper operation wi thout replacing the device.

7/23

VN920 / VN920-B5 / VN920SO

SENSE

INPUT

NORMAL OPERATION

UNDERVOLTAGE

V

CC

V

USD

V

USDhyst

INPUT

OVERVOLT AGE

V

CC

SENSE

INPUT

SENSE

Figure 3: W aveforms

LOAD CURRENT

LOAD CURREN T

OVERTEMPERATURE

INPUT

SENSE

T

TSD

T

R

T

j

LOAD CURRENT

V

OV

V

OVhyst

VCC > V

USD

SHORT TO GROUND

INPUT

LOAD CURRENT

SENSE

LOAD VOLTAGE

INPUT

LOAD VOLTAGE

SENSE

LOAD CURRENT

<Nominal

SHORT TO V

CC

I

SENSE

=

R

SENSE

V

SENSEH

8/23

VN920 / VN920-B5 / VN920SO

GND PROTECTION NETWORK AGAINST REVERSE BATTERY

Soluti on 1: Resistor in the ground line (R

GND

only). This

can be us ed with any type of load. The fo llowin g is an indica tion on how to dim ension the

R

GND

resistor.

1) R

GND

≤ 600mV / (I

S(on)ma x

).

2) R

GND

≥ (−VCC) / (-I

GND

)

where -I

GND

is the DC re vers e grou nd pi n cu rren t an d can

be found in the absolute maximum rating section of the

device’s datasheet. Power Dissipation in R

GND

(when VCC<0: during reverse

battery situations) is: P

D

= (-VCC)2/R

GND

This resistor can be shared amongst several different HSD. Please note that the val u e of this resi s to r sh ou l d be calcul ated with form ula (1) wher e I

S(on)max

becomes t he sum of the maximum on-state currents of the different devices.

Please note that if the microprocessor ground is not common with the device ground then the R

GND

will

produce a shift (I

S(on)max

* R

GND

) in the input thresholds and the status output values. This shift will vary depend ing on how many devi ces are ON in the c ase of several high side drivers sharing the same R

GND

.

If the calculated power dissipation leads to a large resistor or several devices hav e to share the sa me resisto r then the ST suggests to utiliz e Solu tio n 2 (se e below ).

Solution 2:

A diode (D

GND

) in the gr ound line.

A resistor (R

GND

=1kΩ) sh ould b e insert ed in paral lel to

D

GND

if the device will be driving an inductive load.

This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network wi ll produce a shift (

j

600mV) in t he input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diod e/resisto r network.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are grea ter tha n the ones sh own in the ISO T/R 7637/1 table.

µ

C I/Os PROTECTION:

If a ground protection network is used and negative transients are present on the VCC line, th e con trol p ins will be pulled negative. ST suggests to insert a resistor (R

prot

)

in lin e to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the

leakage c urrent of µC an d the current required by the HSD I/Os ( Input le vels comp atibilit y) wi th the lat ch-up li mit of µC I/Os.

-V

CCpeak/Ilatchup

≤ R

prot

≤ (V

OHµC-VIH-VGND

) / I

IHmax

Calculation example: For V

CCpeak

= - 100V an d I

latchup

≥ 20mA; V

OHµC

≥ 4.5V

5kΩ ≤ R

prot

≤ 65kΩ.

Recommended R

prot

value is 10kΩ.

1

APPLICATION SCHEMATIC

V

CC

GND

OUTPUT

D

GND

R

GND

D

ld

µ

C

+5V

R

prot

V

GND

INPUT

CURRENT SENSE

R

SENSE

R

prot

9/23

VN920 / VN920-B5 / VN920SO

11

1

High Level Input Current

Input Clamp Voltage

Off State Output Current

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Iih (uA)

Vin=3.25V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

6

6.2

6.4

6.6

6.8

7

7.2

7.4

7.6

7.8

8

Vicl (V)

Iin=1mA

Input High Level

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

2

2.2

2.4

2.6

2.8

3

3.2

3.4

3.6

Vih (V)

Input Hysteresis VoltageInput Low Level

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

Vil (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

Vhyst (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

1

2

3

4

5

6

7

8

9

IL(off1) (u A)

10/23

VN920 / VN920-B5 / VN920SO

1

Overvoltage Shutdown

Turn-on Voltage Slope Turn-off Voltage Slope

I

LIM

Vs T

case

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

30

32

34

36

38

40

42

44

46

48

50

Vov (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

250

300

350

400

450

500

550

600

650

700

dVout/dt(on) (V/ms)

Vcc=13V

Rl=1.3Ohm

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

50

100

150

200

250

300

350

400

450

500

550

dVout/dt(off) (V/ms)

Vcc=13V

Rl=1.3Ohm

On State Resistance Vs T

case

On State Resistance Vs V

CC

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

10

20

30

40

50

60

70

80

90

100

Ilim (A)

Vcc=13 V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

5

10

15

20

25

30

35

40

45

50

Ron (mOhm)

Iout=10A

Vcc=8V; 36V

5 10152025303540

Vcc (V)

0

5

10

15

20

25

30

35

40

45

50

Ron (mOhm)

Tc= - 40ºC

Tc= 25ºC

Tc= 150ºC

11/23

VN920 / VN920-B5 / VN920SO

SO-16L Maximum turn off current versus load inductance

A = Single Pulse at T

Jstart

=150ºC

B= Repetitive pulse at T

Jstart

=100ºC

C= Repetitive Pulse at T

Jstart

=125ºC

Conditions: VCC=13.5V

Values are generated with RL=0Ω In case of repetitive pulses, T

jstart

(at beginning of each demagnetization) of every pulse must not exceed

the temperature specified above for curves B and C.

VIN, I

L

t

Demagnetization

1

10

100

0.01 0.1 1 10 100 L(mH)

I

LMAX (A)

A

B

C

12/23

VN920 / VN920-B5 / VN920SO

P2PAK Maximum turn off current versus load inductance

A = Single Pulse at T

Jstart

=150ºC

B= Repetitive pulse at T

Jstart

=100ºC

C= Repetitive Pulse at T

Jstart

=125ºC

Conditions: VCC=13.5V

Values are generated with RL=0Ω In case of repetitive pulses, T

jstart

(at beginning of each demagnetization) of every pulse must not exceed

the temperature specified above for curves B and C.

VIN, I

L

t

Demagnetization

1

10

100

0.01 0.1 1 10 100 L(mH)

I

LMAX (A)

A

B

C

13/23

VN920 / VN920-B5 / VN920SO

P2PAK PC Board

R

thj-amb

Vs PCB copper area in open box free air condition

P2PAK THERMAL DATA

Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60m m , PCB thickness=2mm, Cu thickness=35µm, Copper areas: 0.97cm

2

, 8cm2).

30

35

40

45

50

55

0246810

PCB Cu heatsink area (cm^2)

RTHj_amb (°C/W)

Tj-Tamb=50°C

14/23

VN920 / VN920-B5 / VN920SO

1

SO-16L PC Board

R

thj-amb

Vs PCB copper area in open box free air condition

SO-16L THERMAL DATA

Layout condition of Rth and Zth measur ements (PCB FR4 area= 41m m x 48mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: 0.5cm

2

, 6cm2).

40

45

50

55

60

65

70

01234567

PCB Cu heatsink ar ea (cm ^ 2)

RTH j-amb (°C/W)

15/23

VN920 / VN920-B5 / VN920SO

Thermal fitting model of a single channel HSD in SO-16L

Pulse calculation formula

Thermal Parameter

Area/island (cm2)0.56

R1 (°C/W) 0.02 R2 (°C/W) 0.1 R3 ( °C/W) 2.2 R4 (°C/W) 12 R5 (°C/W) 15 R6 (°C/W) 35 20 C1 (W.s/°C) 0.0015 C2 (W.s/°C) 7.00E-03 C3 (W.s/°C) 1.50E-02 C4 (W.s/°C) 0.14 C5 (W.s/°C) 1 C6 (W.s/°C) 5 8

Z

THδ

R

TH

δ Z

THtp

1 δ–()+⋅=

where

δ tpT⁄=

SO-16L Ther mal Impedance Junction Ambient Single Puls e

0.01

0.1

1

10

100

0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s)

ZTH (°C/W)

0.5 cm

2

6 cm

2

T_amb

C1

R1 R2

C2

R3

C3

R4

C4

R5

C5

R6

C6

Pd

Tj

16/23

VN920 / VN920-B5 / VN920SO

Thermal fitting model of a single channel HSD in P2PAK

Pulse calculation formula

Thermal Parameter

Area/island (cm2)0.976

R1 (°C/W) 0.02 R2 (°C/W) 0.1 R3 ( °C/W) 0.22 R4 (°C/W) 4 R5 (°C/W) 9 R6 (°C/W) 37 22 C1 (W.s/°C) 0.0015 C2 (W.s/°C) 0.007 C3 (W.s/°C) 0.015 C4 (W.s/°C) 0.4 C5 (W.s/°C) 2 C6 (W.s/°C) 3 5

Z

THδ

R

TH

δ Z

THtp

1 δ–()+⋅=

where

δ tpT⁄=

P2PAK Thermal Impedance Junction Ambient Single Pulse

T_amb

C1

R1 R2

C2

R3

C3

R4

C4

R5

C5

R6

C6

Pd

Tj

0.01

0.1

1

10

100

1000

0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s)

ZTH (°C/W)

0.97 cm

2

6 cm

2

17/23

VN920 / VN920-B5 / VN920SO

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 2.65 0.104 a1 0.1 0.2 0.004 0.008 a2 2.45 0.096

b 0.35 0.49 0.014 0.019

b1 0.23 0.32 0.009 0.012

C 0.5 0.020

c1 45° (typ.)

D 10.1 10.5 0.397 0.413

E 10.0 10.65 0.393 0.419

e 1.27 0.050

e3 8.89 0.350

F 7.4 7.6 0.291 0.300

L 0.5 1.27 0.020 0.050 M 0.75 0.029 S8° (max.)

SO-16L MECHANICAL DATA

18/23

VN920 / VN920-B5 / VN920SO

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.8 0.189

C 1.37 0.054

D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022

F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142

G1 6.6 6.8 7 0.260 0.268 0.276

H2 10.4 0.409 H3 10.05 10.4 0.396 0.409

L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260

M 4.5 0.177

M1 4 0.157

Diam. 3.65 3.85 0.144 0.152

PENTAWATT (VERTICAL) MECHANICAL DATA

19/23

VN920 / VN920-B5 / VN920SO

DIM.

mm.

MIN. TYP MAX.

A4.30 4.80 A1 2.40 2.80 A2 0.03 0.23

b0.80 1.05 c0.45 0.60

c2 1.17 1.37

D8.95 9.35 D2 8.00

E 10.00 10.40 E1 8.50

e3.20 3.60

e1 6.60 7.00

L 13.70 14.50 L2 1.25 1.40 L3 0.90 1.70 L5 1.55 2.40

R

0.40

V2 0º 8º

Package We ight 1.40 Gr (typ)

P010R

P2PAK MECHANICAL DATA

20/23

VN920 / VN920-B5 / VN920SO

SO-16L TUBE SHIPMENT (no suffix)

1

All dimensions are in mm.

Base Q.ty 50 Bulk Q.ty 1000 Tube length (± 0.5) 532

A 3.5 B 13. 8 C (± 0.1) 0.6

TAPE AND REEL SHIPMENT (suf fix “13TR”)

Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13

F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4

TAPE DIMENSIONS

According to Electronic Industries Association (EIA) S tanda rd 481 rev. A, Feb 1986

All dimensions are i n m m .

Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 12 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2

Top

cover

tape

End

Start

No componentsNo components Components

500mm min

Empty components pockets saled with cover tape.

User direction of feed

A

C

B

REEL DIMENSIONS

21/23

VN920 / VN920-B5 / VN920SO

PENTAWATT TUBE SHIPMENT (no suffix)

All dimensions are in mm.

Base Q.ty 50 Bulk Q.ty 1000 Tube length (± 0.5) 532

A 18 B 33.1 C (± 0.1) 1

C

B

A

22/23

VN920 / VN920-B5 / VN920SO

P

2

PAK TUBE SHIPMENT (no suffix)

All dimensions are in mm.

Base Q.ty 50 Bulk Q.ty 1000 Tube length (± 0.5) 532

A 18 B 33. 1 C (± 0.1) 1

TAPE AND REEL SHIPMENT (suf fix “13TR”)

All dimensions are i n m m .

Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13

F 20.2 G (+ 2 / -0) 24.4 N (min) 60 T (max) 30.4

TAPE DIMENSIONS

According to Electronic Industries Association (EIA) S tanda rd 481 rev. A, Feb 1986

All dimensions are i n m m .

Tape width W 24 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 16 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 11.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2

Top

cover

tape

End

Start

No componentsNo components Components

500mm min

Empty components pockets saled with cover tape.

User direction of feed

REEL DIMENSIONS

C

B

A

23/23

VN920 / VN920-B5 / VN920SO

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Datasheet VN920SO, VN920-B513TR, VN920-B5, VN920 Datasheet (SGS Thomson Microelectronics)

Specifications and Main Features

Frequently Asked Questions

User Manual