SGS Thomson Microelectronics VN340SP Datasheet
VN340SP
QUAD HIGH SIDE SMART
POWER SOLID STATE RELAY
TYPE V
VN34 0S P VCC-55V 0.32 Ω** 0.7 A 36 V
* per Channel
=85oC
**at T
J
■ OUTPUTCURRENT: 0.7A PERCHANNEL
■ DIGITAL I/O’s CLAMPEDAT 32V MINIMUM
demag
*R
DS(on)
*I
OUT
*V
CC
VOLTAGE
■ SHORTEDLOAD AND
OVERTEMPERATUREPROTECTIONS
■ BUILT-IN CURRENT LIMITER
■ UNDER VOLTAGE SHUTDOWN
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ FAST DEMAGNETIZATIONOF INDUCTIVE
LOADS
■ PROTECTIONAGAINST LOSS OF GROUND
■ CONFORMS TO IEC1131-2
DESCRIPTION
The VN340SP is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving four indipendent resistive or
inductive loads with one side connected to
BLOCK DIAGRAM
10
1
Power SO-10
TM
ground.
Active current limitation avoids dropping the
systempower supply in case of shortedload.
Built-in thermal shut-down protects the chip from
over temperature and shortcircuit.
The open drain diagnostic output indicates
overtemperature conditions. Each I/O is pulled
down when over temperature condition of the
relativechannel is verified.
February 1999
1/9
VN340SP
ABSOLUTEMAXIMUM RATING
Symbol Para met e r Val u e Uni t
V
-V
I
OUT
I
I
I
DIAG
V
ESD
E
P
T
T
CONNECTION DIAGRAM
Power Supply Voltage 45 V
CC
Reverse S uppl y Volta ge -4 V
CC
Output Curr ent (cont. ) Internally L imited A
Reverse O ut put Cur rent (per channel ) -6 A
R
Input Curren t (per c hannel) ±10 mA
IN
DIA G P in Cur r ent ±10 mA
Electrostatic Discharge (1.5 kΩ, 100 pF)
Singl e Pulse Avalance Energ y per Channel N ot
AS
2000 V
400 mJ
Simultaneously ( see figure 1)
Power Dissipation at Tc≤ 25oC
tot
Junction Operating Tem p er a tu r e Int er na lly Limit e d
j
St orage Te mperatur e -55 to 150
stg
Internally Limited W
o
C
o
C
CURRENT AND VOLTAGE CONVENTIONS
2/9
VN340SP
THERMALDATA
R
thj-case
R
thj-amb
(1) Per channel
($) When mounted using minimum recommended pad size on FR-4 board
Ther mal Resis t an ce Junction-c a s e (1) Max
Ther mal Resistance J unction-am b ient ($) Max
3
50
ELECTRICAL CHARACTERISTICS (10V< VCC< 36V; -25oC<TJ<85oC unlessotherwisespecified)
POWER
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
R
I
V
demag
V
I
lgnd
∗(see test configuration and application description)
Supply Volt a ge 10 36 V
CC
On St at e R es istance I
on
Supply Cur re nt All Cha n nels O f f
S
Output Voltage at
=0.5A Tj=125oC
OUT
= 0.5 A
I
OUT
On State V
=125oC)
(T
J
I
=0.5A L
out
=30V I
IN
=1mH VCC-65 VCC-55 VCC-45 V
LOAD
out1
.. I
out4
=0
Turn-O ff
Low S tate O utput
OL
V
IN=VIL
R
=10MΩ 1.5 V
LOAD
Voltage
Output Current at
Turn-O ff
VCC = V
= GND = DIAG = 18 to
INX
30 V
=-25oCto85oC ∗
T
amb
0.4
0.32
o
C/W
o
C/W
Ω
Ω
1
6
mA
mA
2mA
SWITCHING(VCC=24V)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Turn-on Delay T ime O f
Out put C urrent
t
Rise Time Of Output
r
Current
Turn-off D elay Ti me O f
Out put C urrent
t
Fall Time Of Ou tput
f
Current
I
= 0 .5 A Res is t iv e Load
OUT
Input Rise Time < 0.1 µs
=25oC
T
j
I
= 0 .5 A Res is t iv e Load
OUT
Input Rise Time < 0.1 µs
=25oC
T
j
I
= 0 .5 A Res is t iv e Load
OUT
Input Rise Time < 0.1 µs
=25oC
T
j
I
= 0 .5 A Res is t iv e Load
OUT
Input Rise Time < 0.1 µs
=25oC
T
j
52 100 µs
94 250 µs
34 50 µs
820µs
3/9
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