SGS Thomson Microelectronics VN31SP Datasheet



VN31SP

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE V

VN31SP 60 V 0.03 Ω 11.5 A 26 V

■ MAXIMUMCONTINUOUS OUTPUT

DSS

CURRENT(#):31 A @T

■ 5 V LOGICLEVELCOMPATIBLEINPUT

■ THERMALSHUT-DOWN

■ UNDER VOLTAGE PROTECTION

■ OPEN DRAIN DIAGNOSTIC OUTPUT

■ INDUCTIVELOAD FAST

R

DS(on)

=85oC

c

I

n(*)

V

CC

DEMAGNETIZATION

■ VERY LOW STAND-BYPOWER

DISSIPATION

DESCRIPTION

The VN31SP is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.

Built-in thermal shut-down protects the chip from
over temperatureand short circuit.
The open drain diagnostic output indicates: open
load in off state, and inon state, output shorted to

BLOCK DIAGRAM

10

1

PowerSO-10

V

and overtemperature. Fast demagnetization

CC

of inductive loads is archivied by negative (-18V)
load voltageat turn-off.

(*) In = Nominal current according to ISO definition for high side automotive switch (seenote 1)
(#) The maximum continuous output current is the the current at T
protection.

July 1998

=85oC for a battery voltage of 13V whichdoes not activateself

c

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VN31SP

ABSOLUTEMAXIMUMRATING

Symb o l Para met er Val u e Uni t

V

(BR)DSS

I

OUT

I

I

-V
I

STAT

V

ESD

P

T

T

CONNECTIONDIAGRAMS

Drain-S o ur ce Breakdown V olt ag e 60 V
Out put Cu rrent (cont. ) a t Tc=85oC31A
Revers e Out put Current at Tc=85oC-31A

R

Input Cur ren t ±10 mA

IN

Reverse Supply Voltage -4 V

CC

St at us Current ±10 mA
Elect r o st at ic Dis charge (1. 5 kΩ, 100 pF) 2000 V
Power Dissipation at Tc=85oC54W

tot

Junction Oper ating Tempe r at ure -40 to 150

j

St orage Tem per atur e -55 to 150

stg

o

C

o

C

CURRENT AND VOLTAGE CONVENTIONS

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VN31SP

THERMALDATA

R

thj-case

R

thj- amb

($) When mounted using minimum recommended pad size on FR-4board

ELECTRICAL CHARACTERISTICS (VCC=13 V; -40 ≤ Tj≤ 125oC unlessotherwisespecified)
POWER

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

In(*) Nominal Current T

R

I

V

DS(MAX)

SWITCHING

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

t

d(on)

t

r

t

d(off)

t

f

(di/dt)

(di/dt)

V

demag

Ther mal Resistan ce Junct io n- case Max
Ther mal Resistan ce Junct io n- ambient ($ ) Max

Supply Voltag e 5.5 13 26 V

CC

=85oCV

c

On St ate Re sist ance I

on

Supply C ur rent Of f State Tj≥ 25oC

S

= 11.5 A

OUT

I

= 11.5 A Tj=25oC

OUT

≤ 0.5 (note 1) 11.5 A

DS(on)

1.2
50

On State

Maximum Voltage Drop I

(^) Tur n-on D elay T im e O f

Out put Cu rrent

(^) Rise Time Of Outp ut

Current

(^) Tur n-of f D elay Tim e Of

Out put Cu rrent

(^) Fall Time Of Output

Current
Tur n-on C ur rent S lope I

on

Tur n-of f Curr ent S lope I

off

Induc t i ve Load Clam p

=25A Tc=85oC1.5V

OUT

I

= 11.5 A Resis tive Load

OUT

90 µs

Input Ris e Time < 0.1 µs
I

= 11.5A Res is t iv e Load

OUT

100 µs

Input Ris e Time < 0.1 µs
I

= 11.5 A Resis tive Load

OUT

140 µs

Input Ris e Time < 0.1 µs
I

= 11.5 A Resis tive Load

OUT

50 µs

Input Ris e Time < 0.1 µs

= 11.5 A

OUT

I

OUT=IOV

= 11.5 A

OUT

I

OUT=IOV

I

= 11.5 A L = 1 mH -24 -18 -14 V

OUT

0.08 0.51A/µs

0.2 3

Volt age

0.06

0.03
50

15

3

o

C/W

o

C/W

Ω
Ω

µA

mA

A/µs
A/µs

A/µs

LOGIC INPUT

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

V

V

I(hyst.)

I

V

Input Low Level

IL

Volt age
Input Hig h Level

IH

Volt age
Input Hysteresis

Volt age
Input Cur ren t VIN=5V

IN

Input Cla mp Volt ag e IIN=10mA

ICL

=2V

V

IN

=0.8V 25

V

IN

=-10mA

I

IN

0.8 V

2(•)V

0.5 V

250 500

250

5.5 6

-0.7 -0.3

µA
µA
µA

V
V

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