SGS Thomson Microelectronics VN30NSP Datasheet
VN30NSP
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE V
VN30 NS P 60 V 0.03 Ω 45 A 26 V
■ OUTPUTCURRENT(CONTINUOUS):
45 A @ T
■ 5 V LOGIC LEVELCOMPATIBLEINPUT
■ THERMALSHUT-DOWN
■ UNDERVOLTAGE SHUT-DOWN
■ OPENDRAIN DIAGNOSTIC OUTPUT
■ VERY LOW STAND-BY POWER
DSS
=25oC
c
R
DS(on)
I
OUT
V
CC
DISSIPATION
DESCRIPTION
The VN30NSP is a monolithic devices made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperatureand short circuit.
The input control is5V logic level compatible.
The open drain diagnostic output indicates open
circuit(no load) and over temperaturestatus.
BLOCK DIAGRAM
10
1
PowerSO-10
July 1998
1/8
VN30NSP
ABSOLUTEMAXIMUMRATING
Symbol Parameter Value Unit
V
(BR)DSS
I
OUT
I
I
-V
I
STAT
V
ESD
P
T
T
CONNECTIONDIAGRAMS
Drain-S o ur ce Breakdown V olt age 60 V
Out put Cu r rent (cont. ) 45 A
Revers e Out put Current -45 A
R
Input Current ±10 mA
IN
Reverse Supply V oltage -4 V
CC
St at us Cur rent ±10 mA
Elect r o st at ic Dischar ge (1.5 kΩ, 100 pF ) 2000 V
Power Dissipation at Tc≤ 25oC 108 W
tot
Junction O perat in g T em pe r at ure -40 t o 150
j
St orage Tem per atur e -55 t o 150
stg
o
C
o
C
CURRENT ANDVOLTAGECONVENTIONS
2/8
VN30NSP
THERMALDATA
R
thj-case
R
thj- amb
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (VCC=13 V; -40 ≤ Tj≤ 125oC unless otherwisespecified)
POWER
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
R
I
SWITCHING
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
d(off)
(di/dt)
(di/dt)
Ther mal Resis t ance Junc t io n-c ase Max
Ther mal Resis t ance Junc t io n-am bien t Max
Supply Voltage 7 26 V
CC
On Stat e Resist a nce I
on
Supply Current Of f Stat e Tj≥ 25oC
S
=18A
OUT
=18A Tj=25oC
I
OUT
1.15
50
On State
Turn-on Delay Time Of
Out put Cu r rent
Rise TimeOf Output
t
r
Current
Turn-off Delay Time Of
Out put Cu r rent
Fall T ime Of Output
t
f
Current
Tur n-on Current S lope I
on
Tur n-of f C urrent Slope I
off
I
= 18 A Resistive L oad
OUT
Input Rise Time < 0.1 µsT
I
= 18 A Resistive L oad
OUT
Input Rise Time < 0.1 µsT
I
= 18 A Resistive L oad
OUT
Input Rise Time < 0.1 µsT
I
= 18 A Resistive L oad
OUT
Input Rise Time < 0.1 µsT
=18A
OUT
I
OUT=IOV
=18A
OUT
I
OUT=IOV
j
j
j
j
=25oC
=25oC
=25oC
=25oC
30 µs
100 µs
80 µs
40 µs
0.06
0.03
50
15
0.53A/µs
3
4
o
C/W
o
C/W
Ω
Ω
µA
mA
A/µs
A/µs
A/µs
LOGIC INPUT
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
Input Low Level
IL
0.8 V
Volt age
V
Input Hig h Lev el
IH
2(*)V
Volt age
V
I(hyst.)
Input Hysteresis
0.5 V
Volt age
I
V
Input Current VIN= 5 V 250 5 00 µA
IN
Input Cla m p Volt ag e IIN=10mA
ICL
=-10mA
I
IN
6
-0.7
PROTECTIONS AND DIAGNOSTICS
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(•) St at us V oltage Output
STAT
Low
V
USD
Under Voltage Shut
Down
I
=1.6mA 0.4 V
STAT
6.5 7 V
V
V
3/8
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