SGS Thomson Microelectronics VN21SP Datasheet



VN21SP

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE V

VN21SP 60 V 0.05 Ω 7A 26V

■ MAXIMUMCONTINUOUS OUTPUT

DSS

CURRENT(#):23 A @T

■ 5 V LOGICLEVELCOMPATIBLEINPUT

■ THERMALSHUT-DOWN

■ UNDERVOLTAGE PROTECTION

■ OPENDRAINDIAGNOSTIC OUTPUT

■ INDUCTIVE LOAD FAST

R

DS(on)

=85oC

c

I

n(*)

V

CC

DEMAGNETIZATION

■ VERYLOW STAND-BYPOWER

DISSIPATION

DESCRIPTION

The VN21SP is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.

Built-in thermal shut-down protects the chip from
over temperatureand short circuit.
The open drain diagnostic output indicates: open
load in off state, and in on state, output shorted to

BLOCK DIAGRAM

10

1

PowerSO-10

V

and overtemperature. Fast demagnetization

CC

of inductive loads is archivied by negative (-18V)
load voltageat turn-off.

(*) In = Nominal current according to ISO definition for high side automotive switch (see note 1)
(#) The maximum continuous output current is the the current at T
protection.

July 1998

=85oC for a battery voltage of 13V whichdoesnot activate self

c

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VN21SP

ABSOLUTEMAXIMUMRATING

Symb o l Para met er Val u e Uni t

V

(BR)DSS

I

OUT

I

I

-V
I

STAT

V

ESD

P

T

T

CONNECTIONDIAGRAMS

Drain-S o ur ce Breakdown V olt ag e 60 V
Out put Cu rrent (cont. ) at Tc=85oC23A
Revers e Out put Current at Tc=85oC-23A

R

Input Cur ren t ±10 mA

IN

Reverse Supply V oltage -4 V

CC

St at us Current ±10 mA
Elect r o st at ic Discharge ( 1. 5 kΩ, 100 pF) 2000 V
Power Dissipation at Tc=85oC48W

tot

Junction Oper ating Tempe r at ure -40 to 150

j

St orage Tem per atur e -55 to 150

stg

o

C

o

C

CURRENT ANDVOLTAGECONVENTIONS

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VN21SP

THERMALDATA

R

thj-case

R

thj- amb

($) When mounted using minimum recommended pad size on FR-4 board

ELECTRICAL CHARACTERISTICS (VCC=13 V; -40 ≤ Tj≤ 125oC unlessotherwisespecified)
POWER

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

In(*) Nominal Current T

R

I

V

DS(MAX)

SWITCHING

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

t

d(on)

t

r

t

d(off)

t

f

(di/dt)

(di/dt)

V

demag

Ther mal Resis t an ce Junction- case Max
Ther mal Resis t an ce Junction- ambient ($) M ax

Supply Voltag e 5.5 13 26 V

CC

=85oCV

c

On S t ate Re sis t a nce I

on

Supply C ur rent Of f State Tj≥ 25oC

S

=7A

OUT

I

=7A Tj=25oC

OUT

≤ 0.5 (note 1) 7 A

DS(on)

1.35
50

On State

Maximum Voltage Drop I

(^) Tur n-on D elay T im e Of

Out put Cu rrent

(^) Rise Time Of O utput

Current

(^) Tur n-of f D elay Tim e Of

Out put Cu rrent

(^) Fall Time Of Output

Current
Tur n-on C ur rent S lope I

on

Tur n-of f Curr ent S lope I

off

Induc t i ve Load Clam p

=20A Tc=85oC1.8V

OUT

I

= 7 A Resistive Load

OUT

60 µs

Input Ris e Time < 0.1 µs
I

= 7 A Resistive Load

OUT

70 µs

Input Ris e Time < 0.1 µs
I

= 7 A Resistive Load

OUT

90 140 µs

Input Ris e Time < 0.1 µs
I

= 7 A Resistive Load

OUT

25 µs

Input Ris e Time < 0.1 µs

=7A

OUT

I

OUT=IOV

=7A

OUT

I

OUT=IOV

I

= 7 A L = 1 mH -24 -18 -14 V

OUT

0.08 0.51A/µs

0.2 3

Volt age

0.10

0.05
50

15

3

o

C/W

o

C/W

Ω
Ω

µA

mA

A/µs
A/µs

A/µs

LOGIC INPUT

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

V

V

I(hyst.)

I

V

Input Low Level

IL

Volt age
Input Hig h Level

IH

Volt age
Input Hysteresis

Volt age
Input Cur ren t VIN=5V

IN

Input Cla mp Volt ag e IIN=10mA

ICL

=2V

V

IN

=0.8V 25

V

IN

=-10mA

I

IN

0.8 V

2(•)V

0.5 V

250 500

250

5.5 6

-0.7 -0.3

µA
µA
µA

V
V

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