SGS Thomson Microelectronics VN16B Datasheet

VN16B

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

PRELIMINARY DATA

TYPE V

VN16B 40 V 0.06 Ω 5.6 A 26 V

■ MAXIMUM CONTINUOUS OUTPUT

DSS

R

DS(on)

In(*) V

CC

CURRENT (#): 20 A @ Tc=85oC

■ 5V LOGIC LEVEL COMPATIBLEINPUT

■ THERMAL SHUT-DOWN

■ UNDER VOLTAGE PROTECTION

■ OPEN DRAIN DIAGNOSTIC OUTPUT

■ INDUCTIVELOADFAST DEMAGNETIZATION

■ VERYLOWSTAND-BY POWER DISSIPATION

DESCRIPTION

The VN16B is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The open drain diagnostic output indicates: open
load in off state and in on state, output shorted to
VCCand overtemperature. Fast demagnetization
of inductive loads is archieved by negative (-18V)
load voltage at turn-off.

BLOCK DIAGRAM

PENTAWATT

(vertical)

PENTAWATT

(horizontal)

PENTAWATT

(in-line)

ORDER CODES:

PENTAWATT vertical VN16B
PENTAWATT horizontal VN16B (011Y)
PENTAWATT in-line VN16B (012Y)

(*) In= Nominal current accor ding to ISO defini t ion f or high side automoti ve swit ch (see note 1)
(#) The maximum conti nuous out put current i s the current at Tc=85oC for a battery voltage of 13 V whi ch does not ac tivate
sel f protection

September 1994

1/11

VN16B

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Uni t

V

(BR)DSS

I

OUT

(RMS ) RMS Output Cu rr ent at Tc=85oC20A

I

OUT

I

I

-V
I

STAT

V

ESD

P

T

T

CONNECTION DIAGRAM

Drain - So urc e Bre ak dow n Voltage 40 V
Out put Current (co nt . ) at Tc=85oC20A

Reverse Outpu t Cur r ent at Tc=85oC (f > 1Hz) -20 A

R

Input Curre nt ±10 mA

IN

Reverse S upply V olt age -4 V

CC

St at us Current ±10 mA
Electrost atic Dischar ge (1.5 kΩ , 100 pF ) 2000 V
Powe r Diss i pation at Tc=25oC82W

tot

Junction Op erating Temper at ur e -40 to 150

j

St or a ge Te mperat ur e -55 to 150

stg

o

C

o

C

CURRENT AND VOLTAGE CONVENTIONS

2/11

VN16B

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resis tance Junction - cas e Max
Thermal Resistance Junction - ambient Max

1.5
60

ELECTRICAL CHARACTERISTICS (8 < VCC< 16 V; -40 ≤ Tj≤ 125oC unless otherwise specified)
POWER

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

In( *) Nominal Curr ent T

R

Supply Voltage 6 13 26 V

CC

On State Resistance I

on

=85oCV

c

=In VCC=13V Tj=25oC 0.038 0.06 Ω

OUT

≤ 0.5 VCC=13V 5.6 8.8 A

DS(on)

o
o

C/W
C/W

I

V

DS(MAX)

R

Supply Current Of f S ta te VCC=13V Tj≥25oC2550µA

S

Maximum Volt age Drop I
Out put to GND I nternal

i

=20A VCC=13V Tc=85oC1 1.8 V

OUT

Tj=25oC51020KΩ

Im pedance

SWITCHING

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(^) Tur n - on Delay T ime Of

t

d(on)

R

=1.6Ω 5 50 500 µ s

load

Out put Current

t

(^) Rise Ti m e Of Output

r

R

=1.6Ω 40 100 680 µs

load

Current

t

(^) T urn-off Delay Tim e Of

d(off)

R

=1.6Ω 10 100 500 µs

load

Out put Current

t

(^) Fall T ime Of Out put

f

R

=1.6Ω 40 100 680 µs

load

Current
(di/dt)
(di/dt)

V

demag

Turn-on C urrent S lope R

on

Turn-off Current Slope R

off

Inductive Load Clamp

=1.6Ω VCC= 13 V 0.008 0.1 A /µs

load

=1.6Ω VCC= 13 V 0.008 0.1 A /µs

load

R

=1.6Ω L = 1 mH -24 -18 -14 V

load

Volt age

LOGIC INPUT

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

IL

V

IH

V

I(hyst.)

I

IN

V

ICL

Input Low Level

Volt age

Input High Level

3.5 ( •)V

Volt age

Input Hys teresis

0.2 1 1.5 V

Volt age

Input Curre nt VIN=5V Tj=25oC 100 µA

Input Clamp Volta ge IIN=10mA

IIN=-10mA

56

-0.7

1.5 V

7V

V

3/11

VN16B

ELECTRICAL CHARACTERISTICS (continued)

PROTECTION AND DIAGNOSTICS(continued)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

STAT

St at us Voltage Outp ut

Low

V

USD

Under V olt age Shut

Down

V

SCL

T

TSD

St at us Clamp Volt age I

Thermal Shut-down

Tem perature

T

SD( hyst.)

Thermal Shut-down

Hysteresis

T

V

I

OL

Reset T emperat ur e 125

R

Open Voltage Lev el Of f -S tate (note 2) 2.5 3.8 5 V

OL

Open Load Cur rent

Level

t

povl

t

pol

(*) In= Nominal current accor ding to ISO defini t ion f or high side automoti ve swit ch (see note 1)
(^) See Switchig Time Waveforms
(•)TheVIHis internal ly clamped at 6V about. It is possible to c onnect this pin to an higher voltage via an external r es istor
cal culated to not exceed 10 mA at the i nput pin.
note 1: The Nominal Cur rent is the current at Tc=85oC for battery voltage of 13V w hich produces a voltage drop of 0.5 V
note 2: I
note 3: t

St at us Delay (not e 3) 5 10 µs

St at us Delay (not e 3) 50 400 2500 µs

=(VCC-VOL)/ROL(see figure)

OL(off)

: ISO def inition (see figur e)

povltpol

I

=1.6mA 0.4 V

STAT

3.5 5 6 V

STAT

I

STAT

=10mA
=-10mA

56

-0.7

7V

140 1 60 180

15 50

On-State 0.15 0.85 A

V

o

C

o

C

o

C

Note 2 Relevant Figure Note 3 Relevant Figure

4/11