SGS Thomson Microelectronics VIPER100SP, VIPER100ASP, VIPER100A, VIPER100 Datasheet
VIPer100/SP
VIPer100A/ASP
SMPS PRIMARY I.C.
May 1999
BLOCK DIAGRAM
TYPE V
DSS
I
n
R
DS(on)
VI Per 1 00/ SP 620V 3 A 2.5 Ω
VI Per 1 00A /ASP 700V 3 A 2.8 Ω
FEATURE
■ ADJUSTABLESWITCHINGFREQUENCYUP
TO200KHZ
■ CURRENT MODE CONTROL
■ SOFTSTART AND SHUT DOWN CONTROL
■ AUTOMATIC BURST MODE OPERATION IN
STAND-BY CONDITIONABLE TO MEET
”BLUE ANGEL” NORM (<1W TOTAL POWER
CONSUMPTION)
■ INTERNALLY TRIMMEDZENER
REFERENCE
■ UNDERVOLTAGE LOCK-OUT WITH
HYSTERESIS
■ INTEGRATED START-UPSUPPLY
■ AVALANCHERUGGED
■ OVERTEMPERATURE PROTECTION
■ LOW STAND-BYCURRENT
■ ADJUSTABLECURRENTLIMITATION
DESCRIPTION
VIPer100/100A, made using VIPower M0
Technology, combines on the same silicon chip a
state-of-the-art PWM circuit together with an
optimized high voltage avalanche rugged Vertical
Power MOSFET (620Vor 700V / 3A).
Typical applications cover off line power supplies
with a secondary power capability of 50W in wide
range condition and 100Win singlerange or with
doubler configuration. It is compatible from both
primary or secondary regulation loop despite
using around 50% less components when
compared with a discrete solution. Burst mode
operation is an additional feature of this device,
offering the possibility to operate in stand-by
mode without extra components.
PowerSO-10
1
10
PENTAWATTHV PENTAWATT HV
(022Y)
F
C
0
0
2
3
1
V
DD
OSC
COMP
DRAIN
SOURCE
13 V
UVLO
LOGIC
SECURITY
LATCH
PWM
LATCH
FF
FF
R/SSQ
S
R1
R2 R3
Q
OSCILLATOR
OVERTEMP.
DETECTOR
ERROR
AMPLIFIER
_
+
0.5 V +
_
1.7
µ
s
DELAY
250 ns
BLANKING
CURRENT
AMPLIFIER
ON/OFF
0.5V
1V/A
_
+
+
_
4.5 V
1/20
ABSOLUTEMAXIMUM RATING
Symb o l Para met er Val u e Uni t
V
DS
Continuous Drain-Sour ce Voltage (Tj = 2 5 to 125oC)
for VIPer100/SP
for VIPer100A/ASP
-0.3 to 620
-0.3 to 700
V
V
I
D
Maximum Current Inte rnally Li mited A
V
DD
Supply Volt age 0 to 15 V
V
OSC
Volt age Range Input 0 t o V
DD
V
V
COMP
Volt age Range Input 0 t o 5 V
I
COMP
Maximum Continuous Curre nt ±2mA
V
esd
Elect r o st at ic discharge (R = 1.5 KΩ C = 100pF) 4000 V
I
D(AR)
Avalanche Drain-Sour ce Curr e nt , Repetitive or Not-Repetit iv e
(T
C
=100oC, Pulse Width Limited by TJmax, δ <1%)
for VIPer100/SP
for VIPer100A/ASP
2
1.4
A
A
P
tot
Power Dissipation at Tc = 25oC82W
T
j
Junction Operating Tempe r at ure Int ernally Limited
o
C
T
stg
St orage T emperature -65 to 150
o
C
THERMALDATA
PENTAWATT-HV PowerSO-10(*)
R
thj-case
Ther mal Res istance Junc ti on-case Max 1.4 1.4
o
C/W
R
thj-a mb.
Ther mal Res istance Ambient-case Max 60 50
o
C/W
(*) When mounted using the minimum recommended pad size on FR-4 board.
CURRENT AND VOLTAGE CONVENTIONS
+
13V
OSC
COMP SOURCE
DRAINVDD
VCOMP
V
OSC
V
DD
VDS
ICOMP
I
OSC
IDD ID
FC00020
CONNECTION DIAGRAMS(Top View)
PENTAWATTHV PENTAWATT HV (022Y) PowerSO-10
VIPer100/SP -VIPer100A/ASP
2/20
PINSFUNCTIONAL DESCRIPTION
DRAINPIN:
Integrated power MOSFET drain pin. It provides
internal bias current during start-up via an
integrated high voltage current source which is
switched off during normal operation.The device
is able to handle an unclamped current during its
normal operation, assuring self protection against
voltage surges, PCB stray inductance, and
allowing a snubberless operation for low output
power.
SOURCEPIN:
Power MOSFET source pin. Primary side circuit
commonground connection.
VDD PIN :
This pin providestwo functions:
- It corresponds to the low voltage supply of the
controlpart of the circuit. If V
DD
goes below 8V,
the start-up current source is activated and the
output power MOSFET is switched off untilthe
V
DD
voltage reaches 11V. During this phase,
the internal current consumption is reduced,
the V
DD
pin is sourcing a current of about 2mA
and the COMP pin is shorted to ground. After
that, the current source is shut down, and the
devicetries to startup by switching again.
- This pin is also connected to the error
amplifier, in order to allow primary as well as
secondary regulation configurations. In caseof
primary regulation, an internal 13V trimmed
reference voltage is used to maintain V
DD
at
13V. For secondary regulation, a voltage
between 8.5V and 12.5V will be put on V
DD
pin
by transformer design, in order to stuck the
output of the transconductanceamplifier to the
high state. The COMP pin behaves as a
constant current source, and can easily be
connected to the output of an optocoupler.
Note that any overvoltage due to regulation
loop failure is still detected by the error
amplifier through the V
DD
voltage, which
cannot overpass 13V. The output voltage will
be somewhathigher thanthe nominalone, but
still undercontrol.
COMP PIN :
This pin provides two functions :
- It is the output of the error transconductance
amplifier, and allows for the connection of a
compensation network to provide the desired
transfer function of the regulation loop. Its
bandwidth can be easily adjusted to the
needed value with usual componentsvalue. As
stated above, secondary regulation
configurations are also implemented through
the COMPpin.
- When the COMP voltage is going below 0.5V,
the shut-downof the circuit occurs, with a zero
duty cycle for thepower MOSFET. This feature
can be used to switch off the converter, and is
automatically activated by the regulation loop
(whatever is the configuration) to provide a
burst mode operation in case of negligible
output power or openload condition.
OSC PIN :
An R
T-CT
network must be connected on that pin
to define the switching frequency. Note that
despite the connection of R
T
to VDD,no
significant frequency change occurs for V
DD
varying from 8V to 15V. It provides also a
synchronisationcapability, when connected to an
external frequencysource.
ORDERING NUMBERS
PENTAW AT T HV PENT AWAT T HV ( 022Y) PowerSO- 10
VI Per 100
VI Per 1 00A
VIP er 100 (022Y)
VIPer100A (022Y)
VIPe r 100SP
VIPer100ASP
VIPer100/SP - VIPer100A/ASP
3/20
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Valu e Uni t
I
D(ar)
Avalanche Current , Repetit ive or Not-Repet it ive
(pulse widt h limited by T
j
max, δ <1%)
for VIPer100/SP
for VIPer100A/ASP (see f ig.12)
2
1.4
A
A
E
(ar)
Single Pulse Avalanche Ener g y
(starti ng T
j
=25oC, ID=I
D(ar)
) (see fig.12)
60 mJ
ELECTRICAL CHARACTERISTICS (TJ=25oC, VDD=13 V, unless otherwisespecified)
POWERSECTION
Symb o l Paramet er Test Con d it i ons Mi n . Typ . Max. Unit
BV
DSS
Drain-Source Voltage ID=1mA V
COMP
=0V
for VIPer100/SP
for VIPer100A/ASP (se e f ig. 5)
620
700
V
V
I
DSS
Of f - State Drain Curr ent V
COMP
=0V TJ=125oC
V
DS
= 620 V for V I Per100/SP
V
DS
= 700 V for V I Per100A/AS P
1
1
mA
mA
R
DS(on)
St at ic Drain Source on
Resistance
ID=2A
for VIPer100/SP
for VIPer100A/ASP
I
D
=2A TJ= 100oC
for VIPer100/SP
for VIPer100A/ASP
2.0
2.3
2.5
2.8
4.5
5.0
Ω
Ω
Ω
Ω
t
f
Fall T ime ID = 0.2 A Vin=300V(1)
(see f ig.3)
100 ns
t
r
Rise Time ID=2A Vin= 300 V (1)
(see f ig. 3)
50 ns
C
OSS
Out put Capacitance VDS= 25 V 150 pF
(1) On Inductive Load, Clamped.
SUPPLY SECTION
Symb o l Paramet er Test Con d it i ons Mi n . Typ . Max. Unit
I
DDch
St art - u p Charging
Current
VDD=5V VDS=70V
(see fig. 2 and fig . 15)
-2 mA
I
DD0
Oper at i ng Supply Current VDD=12V, FSW=0KHz
(see f ig. 2)
12 16 mA
I
DD1
Oper at i ng Supply Current VDD=12V, FSW= 100 KHz 15.5 mA
I
DD2
Oper at i ng Supply Current VDD=12V, FSW=200KHz 19 mA
V
DDo f f
Undervoltage Shutdown (see fig. 2) 8 V
V
DDo n
Undervoltage Reset (see fig. 2) 11 12 V
V
DDhyst
Hysteresis Start-up (see f ig. 2) 2.4 3 V
VIPer100/SP -VIPer100A/ASP
4/20
ELECTRICAL CHARACTERISTICS (continued)
OSCILLATORSECTION
Symb o l Paramet er Test Con d it i ons Mi n . Typ . Max. Unit
F
SW
Os cillator Frequency
Total Variation
RT= 8.2 K
Ω
CT=2.4 nF
V
DD
= 9 to15 V
with R
T
± 1% CT ± 5%
(see fig. 6 and fig . 9)
90 100 110 KHz
V
OSCih
Os cillator Peak Voltage 7.1 V
V
OSCil
Os cillator Valley V o lt age 3.7 V
ERRORAMPLIFIERSECTION
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
V
DDreg
VDDReg ulation Point I
COMP
= 0 mA (se e fig.1) 12. 6 13 1 3. 4 V
∆V
DDreg
Total Variation TJ= 0 to 100oC2%
G
BW
Unity Gain Bandwidt h From Input = VDDto Output = V
COMP
COM P pin i s open (see fig. 10 )
150 KHz
A
VOL
Open Loop Voltage
Gain
COM P pin i s open (see fig. 10 ) 45 52 dB
G
m
DC Transc onductance V
COMP
= 2.5 V (see fig. 1) 1.1 1.5 1.9 mA/V
V
COMPLO
Out put Low Level I
COMP
=-400µAVDD=14V 0.2 V
V
COMPHI
Out put High L ev el I
COMP
= 400 µAVDD=12V 4.5 V
I
COMPLO
Out put Low Current
Capability
V
COMP
=2.5V VDD= 14 V -600 µA
I
COMPHI
Out put High C ur rent
Capability
V
COMP
=2.5V VDD= 12 V 600 µA
PWM COMPARATORSECTION
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
H
ID
∆V
COMP
/∆I
Dpeak
V
COMP
= 1 to 3 V 0.7 1 1.3 V/A
V
COMPoffVCOMP
off s et I
Dpeak
=10mA 0.5 V
I
Dpeak
Peak Current Limitation VDD=12V COMPpinopen 3 4 5.3 A
t
d
Current Sense Delay
to turn-off
ID= 1 A 250 ns
t
b
Blanking Time 250 360 ns
t
on(min)
Minimum on Time 350 ns
SHUTDOWNAND OVERTEMPERATURESECTION
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
V
COMPth
Restart threshold (see fig. 4) 0.5 V
t
DISsu
Disable Set Up Time (see fig. 4) 1.7 5 µs
T
tsd
Ther mal Shut down
Tem perature
(see fig. 8 ) 140 170
o
C
T
hyst
Ther mal Shut down
Hyst eresis
(see fig. 8 ) 40
o
C
VIPer100/SP - VIPer100A/ASP
5/20
Figure1:VDDRegulationPoint
I
COMP
ICOMPHI
ICOMPLO
VDDreg
0
V
DD
Slope =
Gm in mA/V
FC00150
Figure3: TransitionTime
ID
VDS
t
t
tf tr
10%Ipeak
10%V
D
90%VD
FC00160
Figure2: UndervoltageLockout
V
DDon
IDDch
IDD0
VDD
V
DDoff
VDS=70V
Fsw = 0
IDD
VDDhyst
FC00170
Figure4: ShutDown Action
VCOMP
VOSC
ID
t
tDISsu
t
t
ENABLE
DISABLE
ENABLE
VCOMPth
FC00060
Figure5: BreakdownVoltagevs Temperature Figure 6: Typical FrequencyVariation
Temperature (°C)
FC00180
0 20 40 60 80 100 120
0.95
1
1.05
1.1
1.15
BV
DSS
(Normalized)
Temperature (°C)
0 20 40 60 80 100 120 140
-5
-4
-3
-2
-1
0
1
FC00190
(%)
VIPer100/SP -VIPer100A/ASP
6/20
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