VB927
HIGH VOLTAGE IGNITION COIL DRIVER
■ NO EXTERNALCOMPONENT REQUIRED
■ INTEGRATEDHIGH VOLTAGECLAMP
■ COILCURRENT LIMITINTERNALLYSET
■ HIGH RUGGEDNESS
DESCRIPTION
The VB927 is a monolithichigh voltage integrated
circuit made using STM VIPower Technology,
which combines a vertical current flow power
trilinton with a coil current limiting circuit and a
collectorvoltage clamping.
The device is peculiarly suitable for application in
high performance electronic car ignition, where
coil current limitation and voltage clamping are
required.
VB927FI
POWER IC
3
2
1
TO-247 ISOWATT5
BLOCK DIAGRAM
June 1998
1/5
VB927
ABSOLUTEMAXIMUM RATING
Symbol Parameter Value Unit
VB927 VB927FI
HV
V
P
T
THERMAL DATA
R
thj-case
R
thj-amb
Collector Voltage Internally Limited V
c
Maximum Input Voltage 15 V
in
Collector Current Internally Limited A
I
c
Input Cur ren t Internally Limited mA
I
in
Tot al Diss ipation at Tc=25oC 150 70 W
tot
St orage Tem per atur e -40 t o150
stg
Oper at i ng Junction Temper at ure -40 to150
T
j
TO-247 ISOWATT5 Unit
Ther mal R es istance J unction-cas e Max 0.6 2
Ther mal Resis t an ce Junction- ambient Max 30
o
o
o
C
o
C
C/W
C/W
ELECTRICAL CHARACTERISTICS (V
=14 V, -40 < Tj<125oC unlessotherwise specified)
batt
Symbol Parameter Test Conditions Min. Typ. Max. Un it
I
leak
Collector Cut-off
Vin=0 HVc=250V 250 µA
Current
* Clamping Voltage -40 < Tj< 125oC 380 420 490 V
V
cl
V
cg(sat)
I
cl
I
V
f
V
in(h)
V
in(l)
V
n(hyst)
t
d(off)
T
Power S tage
Saturation Voltage
Ic=5A Iin= 10mA 25 ≤ Tj≤ 125oC
=6A Iin= 10mA -40 ≤ Tj≤ 25oC
I
c
* Coil Current Limit Vin=5V -40≤Tj≤125oC8.5 9.5A
Input Cur ren t Vin=5V Ic=5A
in
=5V Ic=5A Tj=25oC3
V
in
** Diode For ward V oltage If=10A Tj=25oC1.22.23.2V
Input Volt a ge (O N) On state input threshold 3.2 3.6 V
Input Volt a ge (O F F) Of f state input thr eshold 3 3.4 V
Input Voltage (Hyst.) 0.2 0.6 V
Turn-off Time Ic = 5 A 30 µs
Junction Temper at ur e
j
See n ot e1 150
2.5
3
10
10
V
V
mA
mA
o
C
Limit
* Coil data:primary resistance Rc= 0.4 - 0.8 Ω, primary inductance Lc=6-8mH
** Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
Note1 : T
temperature, thethermal protection circuit will begin its action reducing the I
a functionof the R
min = 150oC means that the behaviour of the devicewill not be affected for junction temperature lower then 150oC . For higher
j
of the whole systemin which the device with be operating.
th
limit according with the power dissipation. Chip temperature is
cl
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TO-247 MECHANICAL DATA
VB927
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
P025P
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VB927
ISOWATT5MECHANICAL DATA
DIM.
A 5.35 5.65 0.210 0.222
B 3.3 3.8 0.130 0.149
D 2.95 3.1 0.116 0.122
D1 1.88 2.08 0.074 0.081
E 0.45 1 0.017 0.039
F 0.75 1 0.029 0.039
F1 1.5 0.059
F2 1.3 0.051
G 10.16 0.400
G1 5.08 0.200
H 15.8 16.2 0.622 0.637
L 9 0.354
L1 20.25 20.75 0.797 0.817
L2 19.10 19.9 0.751 0.783
L3 22.8 23.6 0.897 0.929
L4 34.9 36.9 1.374 1.452
L5 4.85 5.25 0.190 0.206
L7 16 0.630
N 2.1 2.3 0.082 0.090
R 3.1 0.122
MIN. TYP. MAX. MIN. TYP. MAX.
3.5 3.7 0.138 0.145
mm inch
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VB927
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granted by implication orotherwise under any patent or patentrights of STMicroelectronics. Specification mentioned in this publication are
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are not authorized for use as critical componentsin life support devices or systems without express written approvalof STMicroelectronics.
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