SGS Thomson Microelectronics TODV826, TODV825, TODV625, TODV1225, TODV1025 Datasheet
TODV 625 ---> 1225
March 1995
ALTERNISTORS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
Tc = 80 °C25 A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp = 2.5 ms 390 A
tp = 8.3 ms 250
tp = 10 ms 230
I2tI
2
t value tp = 10 ms 265 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
20 A/µs
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
RD91
(Plastic)
.HIGHCOMMUTATION: > 88 A/ms (400Hz)
.INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: EB1734)
.HIGH VOLTAGECAPABILITY: V
DRM
=1200 V
DESCRIPTION
Symbol Parameter TODV Unit
625 825 1025 1225
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
600 800 1000 1200 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The TODV 625 ---> 1225 use high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge current capability, this family is well adapted to power
control on inductive load (motor, transformer...)
A
2
G
A
1
1/5
GATECHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (c-h) Contact (case-heatsink) with grease 0.1 °C/W
Rth (j-c) DC Junction to case for DC 1.6 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.2 °C/W
Symbol Test Conditions Quadrant Value Unit
I
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 150 mA
V
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj=125°C I-II-III MIN 0.2 V
tgt VD=V
DRMIG
= 500mA
dIG/dt = 3A/µs
Tj=25°C I-II-III TYP 2.5 µs
I
L
IG=1.2 I
GT
Tj=25°C I-III TYP 100 mA
II 200
IH*I
T
= 500mA gate open Tj=25°C TYP 50 mA
VTM*ITM= 35A tp= 380µs Tj=25°C MAX 1.8 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.02 mA
Tj=125°C MAX 8
dV/dt * Linear slope up to VD=67%V
DRM
gate open
Tj=125°C MIN 500 V/µs
(dI/dt)c * (dV/dt)c = 200V/µs Tj=125°C MIN 20 A/ms
(dV/dt)c = 10V/µs88
* For either polarity of electrode A2voltage with reference to electrode A1.
P
G (AV)
=1W PGM= 40W (tp = 20 µs) IGM=8A(tp=20µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TODV 625 ---> 1225
2/5
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