12W AUDIO AMPLIFIER (Vs= 22V, RL=4Ω)
DESCRIPTION
The TDA2008 is a mololithic class B audio power
amplifierin Pentawatt
inglowimpedenceloads(downto3.2Ω).Thedivice
providesa highoutputcurrentcapability(up to 3A),
verylow harmonic and crossoverdistortion.
In addition,thedeviceoffersthefollowingfeatures:
– very lownumber of external components;
– assemblyease,due to Pentawatt
packagewith no electrical insulationsre-
quirements;
– spaceand cost saving;
– high reliability;
– flexibilityin use;
– thermalprotection.
packagedesignedfor driv-
power
TDA2008
Pentawatt
ORDERING NUMBER : TDA 2008V
TYPICALAPPLICATIONCIRCUIT
March 1993
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TDA2008
PIN CONNECTION (top view)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DC supply voltage 28 V
s
Output peak current (repetitive) 3 A
I
o
Output peak current ( non repetitive) 4 A
I
o
P
T
stg,Tj
Power dissipation at T
tot
case
=90°C
Storage andjunction temperature - 40 to 150
20 W
SCHEMATIC DIAGRAM
°C
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DC TEST CIRCUIT
TDA2008
AC TEST CIRCUIT
3/9
TDA2008
THERMAL DATA
Symbol Parameter Value Unit
R
th-j-case
ELECTRICAL CHARACTERISTICS ( Refer to the test circuit, Vs= 18V, T
Thermal resistance junction-case max 3
=25°C unless otherwise
amb
specified)
Symbol Parameter Testconditions Min. Typ. Max. Unit
V
V
I
P
(RMS) Input saturation voltage 300 mV
V
i
V
B Frequency response
Supply voltage 10 28 V
s
Quiescent output voltage
o
10.5 V
(pin 4)
Quiescent drain current
d
65 115 mA
(pin5)
Output power d = 10%
o
Input sensitivity f = 1 KHz
i
(-3 dB)
f = 1 KHz
P
= 0.5W
o
P
=8W
o
= 0.5W
P
o
P
= 12W
o
=1W
P
o
R
=4Ω
L
=8Ω
R
L
R
=4Ω 10 12 W
L
R
=8Ω
L
R
=8Ω
L
R
=4Ω
L
R
=4Ω
L
8W
20
80
14
70
40 to 15,000 Hz
°C/W
mV
mV
mV
mV
d Distortion f = 1 KHz
R
G
G
e
i
Input resistance (pin 1) f = 1 KHz 70 150
i
Voltagegain (open loop)
v
Voltagegain (closed loop) 39.5 40 40.5 dB
v
Input noise voltage
N
Input noise current 60 200 pA
N
SVR Supply voltage rejection
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= 0.05to 4W
P
o
= 0.05to 6W
P
o
f = 1 KHz
R
R
R
BW = 22Hz to 22 KHz
V
R
R
ripple
g
L
= 0.5
= 10KΩ
=4Ω
f = 100 Hz 30 36 dB
=8Ω
L
=4Ω
L
=8Ω
L
0.12
0.12
1
1
80 dB
15
%
%
KΩ
µV
TDA2008
APPLICATION INFORMATION
Figure 1. Typicalapplicationcircuit Figure 2. P.C. board and component layout for
the circuit of fig. 1 (1:1 scale)
Figure3.25Wbridgeconfigurationapplica-tion
circuit (°)
(°) Thevalue of the capacitorr C3 and C4 are different to optimize
the SVR (Typ. = 40 dB)
Figure4. P.C. boardand componentlayout for the
circuit of fig. 3 (1:1 scale)
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TDA2008
Figure 5. Quiescent current
vs. supplyvoltage
Figur e 8. Di stor tion vs.
frequency
Figure 6. Output voltage vs.
supply voltage
Fig ur e 9. Supply volta ge
rejection vs.frequency
Figure 7. Output power vs.
supply voltage
Figure10. Maximum al- lowable
power dissipation vs. ambient
temperature
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PRACTICAL CONSIDERATIONS
TDA2008
Printedcircuit board
The layout shown in Fig. 2 is recommended. If
differentlayoutsareused,thegroundpointsofinput
1 and input 2 must be well decoupled from the
ground of the output through which a rather high
currentflows.
Assemblysuggestion
No electricalinsulation i s neededbetweenthe
Component
C1 2.2µF Input DC decoupling Noise at switch-on,
C2
C3
C4
Recommended
value
470µF
0.1µF
1000µF
Purpose
Ripple rejection. Degradation of SVR.
Supply by passing. Danger of oscillation.
Output coupling. Higher low frequency
packageandthe heat-sink.Pin lengthshouldbeas
short as possible.Thesolderingtemperaturemust
not exceed260°C for 12 seconds.
Applicationsuggestions
The recommended component values are those
shownin the applicationcircuits of Fig.1. Different
valuescanbeused.Thefollowingtableisintended
to aid the car-radio designer.
Larger than
recommended value
switch-off
cutoff.
Smaller than
recommended value
C5 0.1µF Frequency stability. Danger of oscillation
R1
R2
R3 1Ω Frequency stability. Danger of oscillation
(*) Theclosed loop gain must be higher than 26dB.
(G
v
-1)•R2
2.2Ω
Setting of gain. (*) Increase of drain
Setting of gain and
SVR.
at high frequencies
with inductive loads.
current.
Degradation of SVR.
at high frequencies
with inductiveloads.
7/9
TDA2008
PENTAWATT PACKAGE MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.4 0.126 0.134 0.142
G1 6.8 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 17.85 0.703
L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 4.5 0.177
M1 4 0.157
Dia 3.65 3.85 0.144 0.152
mm inch
A
H3
L
L1
C
D1
Dia.
L7
L6
D
L2
L3L5
F1
H2
E
MM1
G1
G
F
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TDA2008
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
licenseis granted by implication or otherwise under anypatent or patent rightsof SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized for useas criticalcomponents in life supportdevices or systems without express
written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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