SGS Thomson Microelectronics TDA2006 Datasheet
DESCRIPTION
The TDA2006 is a monolithic integrated circuit in
Pentawatt package, intended for use as a low
frequencyclass ”AB” amplifier. At ±12V,d = 10 %
typicallyitprovides12Woutputpowerona4Ω load
and 8W on a 8Ω . The TDA2006 provides high
output current and has very low harmonic and
cross-over distortion. Further the device incorporatesanoriginal(andpatented)shortcircuitprotection system comprising an arrangement for
automaticallylimitingthe dissipatedpower soas to
keep the working point of the output transistors
within their safe operating area. A conventional
thermal shutdown system is also included. The
TDA2006is pin to pin equivalentto theTDA2030.
TYPICALAPPLICATION CIRCUIT
TDA2006
12W AUDIOAMPLIFIER
PENTAWATT
ORDERING NUMBERS : TDA2006V
TDA2006H
May 1995
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TDA2006
SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
s
V
V
I
o
P
tot
T
stg,Tj
Supply Voltage ± 15 V
Input Voltage V
i
Differential Input Voltage ± 12 V
i
s
Output Peak Current (internaly limited) 3 A
Power Dissipation at T
=90°C20W
case
Storage andJunction Temperature – 40 to 150 °C
THERMALDATA
Symbol Parameter Value Unit
R
th (j-c)
Thermal Resistance Junction-case Max 3 °C/W
PIN CONNECTION
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TDA2006
ELECTRICALCHARACTERISTICS
(refer to thetest circuit ; V
= ± 12V, T
S
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
I
V
P
Supply Voltage ± 6 ± 15 V
s
I
Quiescent Drain Current Vs= ± 15V 40 80 mA
d
Input Bias Current Vs= ± 15V 0.2 3 µA
I
b
Input Offset Voltage Vs= ± 15V ± 8mV
OS
Input Offset Current Vs= ± 15V ± 80 nA
OS
Output Offset Voltage Vs= ± 15V ± 10 ± 100 mV
OS
Output Power d = 10%, f = 1kHz
o
d Distortion P
V
Input Sensitivity Po= 10W, RL=4Ω, f = 1kHz
i
B Frequency Response (– 3dB) P
R
Input Resistance (pin1) f = 1kHz 0.5 5 MΩ
i
G
G
e
Voltage Gain (open loop) f = 1kHz 75 dB
v
Voltage Gain (closed loop) f = 1kHz 29.5 30 30.5 dB
v
Input Noise Voltage B (– 3dB) = 22Hz to 22kHz, RL=4Ω 310µV
N
i
Input Noise Current B (– 3dB) = 22Hz to 22kHz, RL=4Ω 80 200 pA
N
SVR Supply Voltage Rejection R
I
Drain Current Po= 12W, RL=4Ω
d
T
Thermal Shutdown Junction
j
Temperature
(*) Referring to Figure 15, single supply.
=25oC unless otherwise specified)
amb
=4Ω
R
L
=8Ω 6
R
L
= 0.1 to 8W, RL=4Ω, f = 1kHz
o
= 0.1 to 4W, RL=8Ω, f = 1kHz
P
o
=6W,RL=8Ω, f = 1kHz
P
o
=8W,RL=4Ω 20Hz to 100kHz
o
=4Ω,Rg= 22kΩ,f
L
=8W,RL=8Ω
P
o
= 100Hz (*) 40 50 dB
ripple
12
8
0.2
0.1
200
220
850
500
145 °C
W
%
%
mV
mV
mA
mA
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TDA2006
Figure1 : OutputPower versus Supply Voltage Figure 2 : Distortionversus OutputPower
Figure3 : Distortionversus Frequency Figure4 : Distortion versusFrequency
Figure5 : Sensitivityversus Output Power Figure6 : Sensitivityversus OutputPower
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