SGS Thomson Microelectronics TCC3100 Datasheet

RF & MICROWAVE TRANSISTORS
.170 - 230 MHz
.28 VOLTS
.CLASS AB PUSH PULL
. D ESI GN ED FOR H I GH PO WER L INEAR
.HIGH SATURATED POWER CAPABILITY
.GOLD METALLIZATION
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.P
OUT
100WMIN.WITH11.0dBGAIN
=
SD1456 (TCC3100)
TV/LINEAR APPLICATIONS
.400 x .425 8LF L (M168)
epoxy sealed
ORDER CODE
SD1456
PIN CONNECTION
BRANDING
TCC3100
DESC RIPTIO N
The SD1456 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF and Band III television transmitters and trans­posers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V Collector-Emitter Voltage 33 V Emitter-Base Voltage 3.5 V Device Current 16 A Power Dissipation 150 W Junction Temperature +200 Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
°
C
°
C
November 1992
1/5
SD1456 (TCC3100)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV BV BV BV
h
CBO
CER
CEO
EBO
FE
IC= 50mA IE= 0mA 65 V IC= 50mA RBE= 15 60 V IC= 50mA IB= 0mA 33 V IE= 5mA IC= 0mA 3.5 V VCE= 5V IC= 500mA 20 150
DYNAMIC (Class AB)
Symbol Test C ond itions
P
OUT
G
P
η
cP
C
OB
f = 225 MHz VCE= 28 V IC= 2 x 100 mA 100 W P
= 100 W VCE= 28 V IC= 2x100mA 11 dB
OUT
= 100 W VCE= 28 V IC= 2x100mA 70 %
OUT
f = 1 MHz VCB= 28 V 60 pF
DYNAMIC (Class A)
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
Symbol Test C ond itions
P
*f=225 MHz VCE= 28 V IC= 2 x 2.5 A 28 32 W
OUT
Value
Min. Typ. Max.
GP*PIN= 1.1 W VCE= 28 V IC= 2 x 2.5 A 14 15 dB
IMD3*PIN= 1.1 W VCE= 28 V P
Note: * Class A Performance Characteristics Indicate Capability but are not Tested.
IMD3 - 3 Tone Meaurement;−8,−7,−16dB relative to P
REF
= 28 W 51 dB
REF
TYPICA L PERFO R MA NCE
BROADBAND POWER GAIN vs
POWER OUTPUT vs POWER INPUT
FREQUENCY
Unit
2/5
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