RF & MICROWAVE TRANSISTORS
.170 - 230 MHz
.28 VOLTS
.CLASS AB PUSH PULL
. D ESI GN ED FOR H I GH PO WER L INEAR
OPERATION
.HIGH SATURATED POWER CAPABILITY
.GOLD METALLIZATION
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.P
OUT
100WMIN.WITH11.0dBGAIN
=
SD1456 (TCC3100)
TV/LINEAR APPLICATIONS
.400 x .425 8LF L (M168)
epoxy sealed
ORDER CODE
SD1456
PIN CONNECTION
BRANDING
TCC3100
DESC RIPTIO N
The SD1456 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band III television transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 33 V
Emitter-Base Voltage 3.5 V
Device Current 16 A
Power Dissipation 150 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD1456 (TCC3100)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
h
CBO
CER
CEO
EBO
FE
IC= 50mA IE= 0mA 65 — — V
IC= 50mA RBE= 15Ω 60 — — V
IC= 50mA IB= 0mA 33 — — V
IE= 5mA IC= 0mA 3.5 — — V
VCE= 5V IC= 500mA 20 — 150 —
DYNAMIC (Class AB)
Symbol Test C ond itions
P
OUT
G
P
η
cP
C
OB
f = 225 MHz VCE= 28 V IC= 2 x 100 mA 100 — — W
P
= 100 W VCE= 28 V IC= 2x100mA 11 — — dB
OUT
= 100 W VCE= 28 V IC= 2x100mA 70 — — %
OUT
f = 1 MHz VCB= 28 V — 60 — pF
DYNAMIC (Class A)
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
Symbol Test C ond itions
P
*f=225 MHz VCE= 28 V IC= 2 x 2.5 A 28 32 — W
OUT
Value
Min. Typ. Max.
GP*PIN= 1.1 W VCE= 28 V IC= 2 x 2.5 A 14 15 — dB
IMD3*PIN= 1.1 W VCE= 28 V P
Note: * Class A Performance Characteristics Indicate Capability but are not Tested.
IMD3 - 3 Tone Meaurement;−8,−7,−16dB relative to P
REF
= 28 W — −51 — dB
REF
TYPICA L PERFO R MA NCE
BROADBAND POWER GAIN vs
POWER OUTPUT vs POWER INPUT
FREQUENCY
Unit
2/5