RF & MICROWAVE TRANSISTORS
.170 - 230 MHz
.28 VOLTS
.CLASS AB PUSH PULL
. D ESI GN ED FOR H I GH PO WER L INEAR
OPERATION
.HIGH SATURATED POWER CAPABILITY
.GOLD METALLIZATION
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.P
OUT
100WMIN.WITH11.0dBGAIN
=
SD1456 (TCC3100)
TV/LINEAR APPLICATIONS
.400 x .425 8LF L (M168)
epoxy sealed
ORDER CODE
SD1456
PIN CONNECTION
BRANDING
TCC3100
DESC RIPTIO N
The SD1456 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band III television transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 33 V
Emitter-Base Voltage 3.5 V
Device Current 16 A
Power Dissipation 150 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD1456 (TCC3100)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
h
CBO
CER
CEO
EBO
FE
IC= 50mA IE= 0mA 65 — — V
IC= 50mA RBE= 15Ω 60 — — V
IC= 50mA IB= 0mA 33 — — V
IE= 5mA IC= 0mA 3.5 — — V
VCE= 5V IC= 500mA 20 — 150 —
DYNAMIC (Class AB)
Symbol Test C ond itions
P
OUT
G
P
η
cP
C
OB
f = 225 MHz VCE= 28 V IC= 2 x 100 mA 100 — — W
P
= 100 W VCE= 28 V IC= 2x100mA 11 — — dB
OUT
= 100 W VCE= 28 V IC= 2x100mA 70 — — %
OUT
f = 1 MHz VCB= 28 V — 60 — pF
DYNAMIC (Class A)
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
Symbol Test C ond itions
P
*f=225 MHz VCE= 28 V IC= 2 x 2.5 A 28 32 — W
OUT
Value
Min. Typ. Max.
GP*PIN= 1.1 W VCE= 28 V IC= 2 x 2.5 A 14 15 — dB
IMD3*PIN= 1.1 W VCE= 28 V P
Note: * Class A Performance Characteristics Indicate Capability but are not Tested.
IMD3 - 3 Tone Meaurement;−8,−7,−16dB relative to P
REF
= 28 W — −51 — dB
REF
TYPICA L PERFO R MA NCE
BROADBAND POWER GAIN vs
POWER OUTPUT vs POWER INPUT
FREQUENCY
Unit
2/5
TYPICAL PERFO RM AN CE (cont ’d )
SD1456 (TCC 310 0)
INTERMODULATION DISTORTION vs
POWER OUTPUT
IMPEDA NCE DATA
COLLECTOR EFFICIENCY vs
FREQUENCY
FREQ. ZIN(Ω)Z
OUT
170 MHz 1.3 + j 0.6 9.5 − j10.0
200 MHz 1.0 + j 1.0 9.0 − j 8.0
230 MHz 0.9 + j 1.8 6.3 − j 6.5
P
= 100 W
OUT
VCE= 28 V
ICQ= 2 x 100 mA
Class AB
(Ω)
3/5
SD1456 (TCC3100)
IMPEDA NCE DATA
FREQ. ZIN(Ω)Z
OUT
170 MHz 1.05 + j 0.65 13.5 − j 9.0
200 MHz 0.9 + j 1.1 11.0 − j 6.5
230 MHz 1.25 + j 1.8 9.5 − j 7.7
VCE= 28 V
ICQ= 2 x 2.5 A
Class A
(Ω)
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0168
SD1456 (TCC 310 0)
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement ofpatents or other rights of third partieswhich may results from its use. No
license isgranted byimplication orotherwise under any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin lifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
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SGS-THOMSON Microelectronics GROUP OF COMPANIES
5/5
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