®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
I
F(AV)
V
RRM
Tj (max) 175 °C
(max) 0.67 V
V
F
FEATURES AND BENEFITS
2 x 15 A
100 V
STPS30H100CW
A1
K
A2
NEGLIGIBLE SWITCHING LOSS ES
LOW LEAKAGE CURRE NT
GOOD TRADE OFF BETWEEN LEAKAGE
A2
K1
A1
CURRENT AND FORWARD VOLTA GE DROP
LOW THERMAL RESISTA NCE
AVALANCHE R ATE D
TO-247
DESCRIPTION
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high frequency DC to DC converters.
Packaged in TO-247, this device is intended
for use in high frequency inverters.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
Repetitive peak reverse voltage 100 V
RMS forward current 30 A
Average forward current Tc = 155°C
δ
= 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal 250 A
Repetitive peak reverse current tp = 2 µs square F = 1kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 3 A
Storage temperature range - 65 to + 175
stg
15
30
°
Tj Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
A
C
dPtot
dTj
<
Rth(j−a
* :
July 1999 - Ed: 3D
1
thermal runaway condition for a diode on its own heatsink
)
1/4
STPS30H100CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
°
R
R
th (j-c)
th (c)
Junction to case Per diode
Total
Coupling 0.1
1.6
0.9
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
C/W
I
* Reverse leakage current Tj = 25°CV
R
= V
R
Tj = 125°C26mA
** Forward voltage drop Tj = 25°CI
V
F
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the fol lowing equa tion :
P = 0.54 x I
Fig. 1:
+ 0.0086 x I
F(AV)
F2(RMS)
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
14
12
10
8
6
4
2
0
02468101214161820
δ = 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
δ = 1
=tp/T
T
tp
= 15 A 0.80 V
F
= 15 A 0.64 0.67
F
= 30 A 0.93
F
= 30 A 0.74 0.80
F
Fig. 2:
temperature (δ=0.5, per diode).
IF(av)(A)
18
16
14
12
10
8
6
4
2
δ
0
0 25 50 75 100 125 150 175
RRM
5
µ
Average forward current versus ambient
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
=tp/T
tp
Tamb(°C)
A
2/4
STPS30H100CW
Fig. 3:
Non repetitive s ur ge peak forward curr ent ver-
sus overload d uration (ma ximum valu es, per diode).
IM(A)
240
220
200
180
160
140
120
100
Tc=25°C
Tc=75°C
80
60
IM
40
20
0
1E-3 1E-2 1E-1 1E+0
Fig. 5:
t
δ=0.5
t(s)
Reverse leakage current versus reverse
Tc=150°C
voltage applied (typical values, per diode).
IR(mA)
2E+0
1E+0
1E-1
1E-2
Tj=125°C
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
T
0.2
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
Fig. 6:
Junction capacitance versus reverse
tp(s)
δ
=tp/T
tp
voltage applied (typical values, per diode).
C(pF)
1000
500
F=1MHz
Tj=25°C
1E-3
Tj=25°C
1E-4
VR(V)
1E-5
0 102030405060708090100
Fig. 7:
Forward voltage drop versus forward cur-
rent (maximum values, per diode) .
IFM(A)
200
100
Tj=125°C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tj=25°C
VFM(V)
200
VR(V)
100
1 2 5 10 20 50 100
3/4
STPS30H100CW
PACKAGE MECHANICAL DAT A
TO-247
V
V
H
L5
L
F2
F4
L1
F3
L3
F1
V2
F(x3)
G
= =
Dia.
L4L2
ME
A
D
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Cooling method: C
Recommended torque value: 0.8 N.m.
Maximum torque value: 1 N.m.
Ordering type Marking Package Weight Base qty Delivery mode
STPS30H100CW STPS30H100CW TO-247 4.36g 30 Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherw ise under any pa tent or patent ri ghts of STMi croelec tronics. Specific ations ment ioned in t his publicati on are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectr oni cs products are n ot au thorized for use as cri t ic al components in life support dev ic es or systems without ex press written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroel ectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4
Loading...