SGS Thomson Microelectronics STPS30H100CW Datasheet
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
I
F(AV)
V
RRM
Tj (max) 175 °C
(max) 0.67 V
V
F
FEATURES AND BENEFITS
2 x 15 A
100 V
STPS30H100CW
A1
K
A2
NEGLIGIBLE SWITCHING LOSS ES
LOW LEAKAGE CURRE NT
GOOD TRADE OFF BETWEEN LEAKAGE
A2
K1
A1
CURRENT AND FORWARD VOLTA GE DROP
LOW THERMAL RESISTA NCE
AVALANCHE R ATE D
TO-247
DESCRIPTION
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high frequency DC to DC converters.
Packaged in TO-247, this device is intended
for use in high frequency inverters.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
Repetitive peak reverse voltage 100 V
RMS forward current 30 A
Average forward current Tc = 155°C
δ
= 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal 250 A
Repetitive peak reverse current tp = 2 µs square F = 1kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 3 A
Storage temperature range - 65 to + 175
stg
15
30
°
Tj Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
A
C
dPtot
dTj
<
Rth(j−a
* :
July 1999 - Ed: 3D
1
thermal runaway condition for a diode on its own heatsink
)
1/4
STPS30H100CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
°
R
R
th (j-c)
th (c)
Junction to case Per diode
Total
Coupling 0.1
1.6
0.9
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
C/W
I
* Reverse leakage current Tj = 25°CV
R
= V
R
Tj = 125°C26mA
** Forward voltage drop Tj = 25°CI
V
F
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the fol lowing equa tion :
P = 0.54 x I
Fig. 1:
+ 0.0086 x I
F(AV)
F2(RMS)
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
14
12
10
8
6
4
2
0
02468101214161820
δ = 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
δ = 1
=tp/T
T
tp
= 15 A 0.80 V
F
= 15 A 0.64 0.67
F
= 30 A 0.93
F
= 30 A 0.74 0.80
F
Fig. 2:
temperature (δ=0.5, per diode).
IF(av)(A)
18
16
14
12
10
8
6
4
2
δ
0
0 25 50 75 100 125 150 175
RRM
5
µ
Average forward current versus ambient
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
=tp/T
tp
Tamb(°C)
A
2/4
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