STPS3060CW
POWER SCHOTTKY RECTIFIER
MAJORPRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
(max) 0.65 V
V
F
2 x15A
60 V
A1
K
A2
FEATURES AND BENEFITS
HIGHREVERSEVOLTAGE
NEGLIGIBLESWITCHINGLOSSES
LOWFORWARD VOLTAGE DROP
LOWTHERMAL RESISTANCE
A2
K
DESCRIPTION
Dual center tap schottky rectifier suited for
TO-247
A1
switchmodepower supply and high frequency DC
to DC converters.
Packaged in TO-247 this device is intended for
usein high frequency inverters.
ABSOLUTE RATINGS(limitingvalues)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitivepeak reversevoltage
RMSforwardcurrent Per diode
Averageforwardcurrent Tc= 125°C
Surgenon repetitiveforward
current
I
RRM
T
stg
Tj
dV/dt
July 1998 - Ed: 2
Peakrepetitivereverse current tp = 2µs
Storagetemperaturerange
Maximumjunction temperature
Critical rate of risereversevoltage
δ =0.5
tp = 10ms
Sinusoidal
F = 1kHz
Per diode
Perdevice
Perdiode
Perdiode
60 V
30 A
15
A
30
200 A
1A
- 65 to +150 °C
150
10000 V/µs
1/4
STPS3060CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junctiontocase Perdiode
total 0.9
R
th(c)
Coupling 0.15 °C/W
Whenthe diodes1 and 2 are used simultaneously:
(diode 1) = P(diode1)x Rth(Perdiode)+ P(diode 2) x R
∆ T
J
th(c)
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICSPER DIODE
Symbol Parameter TestsConditions Min. Typ. Max. Unit
1.6 °C/W
*
I
R
V
F
Reverseleakage
current
**
Forwardvoltage drop Tj= 25°CI
Tj= 25°CV
Tj= 125°C
Tj= 125°CI
Tj= 125°CI
Pulse test : * tp = 5 ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the conductionlosses use the following equation:
P = 0.56 xI
F(AV)
+ 0.0113 I
F2(RMS)
Fig. 1: Average forward power dissipation versus
averageforwardcurrent (per diode).
PF(av)(W)
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16
δ= 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
=tp/T
δ
δ =1
T
tp
R=VRRM
30 µA
525mA
=20A
F
=20A
F
=10A
F
0.58 0.65
0.96 V
0.8
Fig. 2: Average current versus ambient
temperature(δ = 0.5) (per diode).
IF(av)(A)
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150
δ
T
=tp/T
Rth(j-a)=15°C/W
tp
Rth(j-a)=Rth(j-c)
Tamb(°C)
2/4
STPS3060CW
Fig. 3: Non repetitive surge peak forward
current versus overload duration (maximum
values) (per diode).
IM(A)
160
140
120
100
Tc=50°C
Tc=75°C
80
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=110°C
Fig. 5: Reverse leakage current versus reverse
voltageapplied(typical values) (per diode).
IR(mA)
1E+1
1E+0
1E-1
1E-2
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Fig. 4: Relative variation of thermal transient
impedancejunction to case versus pulseduration
(perdiode).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0
t(s)
δ
=tp/T
T
tp
Fig. 6: Junction capacitance versus reverse
voltageapplied(typicalvalues) (per diode).
C(pF)
1000
500
200
F=1MHz
Tj=25°C
1E-3
5 1015202530354045505560
VR(V)
Fig. 7: Forward voltage drop versus forward
current(maximum values)(per diode).
VFM(V)
1.8
Tj=125°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1 10 100 200
IFM(A)
100
12 51020 60
VR(V)
3/4
STPS3060CW
PACKAGEMECHANICAL DATA
TO247
V
V
H
L5
L
F4
F3
F2
L1
L3
F1
V2
F(x3)
G
==
Dia.
L4L2
D
ME
A
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Marking:STPS3060CW
Coolingmethod : C
Weight: 4.4 g
Recommendedtorquevalue : 0.8m.N
Maximumtorque value :1.0m.N
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change withoutnotice. This publicationsupersedes andreplaces all information previously supplied.
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