SGS Thomson Microelectronics ST83003 Datasheet
®
HIGH VOLTAGE FAS T-SWITCHING
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNA M IC PARA ME TERS
■ MINIMUM LO T- TO - LOT SPREAD F O R
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SU PPLIES
ST83003
NPN POWER TRANSISTOR
1
2
3
DESCRIPTION
The device is manufactured using high voltage
SOT-32
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The ST83003 is expressly designed for a new
INTER NAL SCH E M ATI C DIAG RA M
solution to be used in compact fluorescent lamps,
where it is coupled with the ST93003, its
complementary PNP transistor.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = 0) 700 V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage
EBO
= 0, IB = 0.75 A, tp < 10µs, Tj < 150oC)
(I
C
I
Collector Current 1.5 A
C
Collector Peak Current (tp < 5 ms) 3 A
CM
Base Current 0.75 A
I
B
Base Peak Current (tp < 5 ms) 1.5 A
BM
Total Dissipation at Tc = 25 oC40W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
V
(BR)EBO
V
o
C
o
C
October 2002
1/7
ST83003
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
89
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
V
(BR)EBO
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter-Base
= 700V
V
CE
V
= 700V T
CE
I
= 10 mA 12 18 V
E
= 125oC
j
1
5
Breakdown Voltage
(I
= 0)
C
V
CEO(sus)
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
I
= 10 mA
C
400 V
L = 25 mH
IC = 0.5 A IB = 0.1 A
I
= 0.35 A IB = 50 mA
C
0.5
1
IC = 0.5 A IB = 0.1 A 1 V
Saturation Voltage
h
∗ DC Current Gain IC = 10 mA V
FE
I
= 0.35 A V
C
I
= 1 A V
C
CE
CE
CE
= 5 V
= 5 V
= 5 V
10
16
25 32
4
RESISTIVE LOAD
t
Rise Time
r
s
t
f
Storage Time
Fall Time
t
INDUCTIVE LOAD
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
s
t
f
Storage Time
Fall Time
I
= 0.35 A VCC = 125 V
C
I
= 70 mA IB2 = -70 mA
B1
≥ 25 µs (see figure 2)
T
p
IC = 0.5 A IB1 = 0.1 A
V
= -5 V L = 10 mH
BE(off)
V
= 300 V (see figure 1)
clamp
1.5
100
2.2
0.2
450
90
2.9
mA
mA
V
V
ns
µs
µs
ns
ns
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ST83003
Safe Operating Areas
DC Current Gain
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Sat uration Volt ag e
3/7
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