SGS Thomson Microelectronics PD57002 Datasheet

PD57002

PD57002S

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 2 W with 15 dB gain @ 960 MHz / 28 V

OUT

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD57002 is a common source N-Channel, en­hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up t o 1000
MHz. The PD5700 2 is d es igned for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for digital cellular
BTS applications requiring high linearity.

The PowerSO-10 plastic package, designed to of­fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been spe cially
optimized for RF needs and offers excellent RF
performances and ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

LdmoST

The

ORDER CODE

PD57002

ORDER CODE

PD57002S

Plastic FAMILY

PowerSO-10RF

(formed lead)

BRANDING

PD57002

PowerSO-10R F

(straight lead)

BRANDING

PD57002S

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 165 °C

T

STG

Drain-Source Voltage 65 V
Gate-Source Voltage ± 20 V
Drain Current 0.25 A
Power Dissipation (@ Tc = 70°C) 4.75 W

Storage Temperature -65 to +150 °C

CASE

= 25°C)

THERMA L D ATA

R

th(j-c)

Junction -Case Thermal Resistance 20 °C/W

1/16March, 7 2003

PD57002 - PD57002S

ELECTRICAL SPECIFICATION (T

CASE

= 25°C)

STATIC

Symbol Test Conditions Min. Typ. Max. Unit

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

g

C
C
C

FS

ISS
OSS
RSS

VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V

= 10 mA

ID

VGS = 10 V ID = 125 mA
VDS = 10 V ID = 200 mA
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz

1 µA
1 µA

2.0 5.0 V

0.7 0.9 V

-- mho

7.1 pF

5.8 pF

0.1 pF

DYNAMIC

Symbol Test Conditions Min. Typ. Max. Unit

P

1dB

G

P

η

D

Load

mismatch

VDD = 28 V IDQ = 10 mA f = 960 MHz
V

= 28 V IDQ = 10 mA P

DD

VDD = 28 V IDQ = 10 mA P

= 28 V IDQ = 10 mA P

V

DD

= 2 W f = 960 MHz

OUT

= 2 W f = 960 MHz

OUT

= 2 W f = 960 MHz

OUT

ALL PHASE ANGLES

2W
15 dB
45 %

10:1 VSWR

GATE

SC15200

PIN CONNECTION

PD57002S

SOURCE

DRAIN

SC13140

IMPEDANCE DATA

Z

FREQ. MHz

925 1.894 - j 13.43 6.445 + j 23.60
945 2.440 - j 12.53 7.245 + j 25.09
960 2.760 - j 12.13 7.715 + j 25.69

(Ω)Z

IN

Typical Input
Impeda nce

G

Zin

(Ω)

DL

D

Z

Typical Drain
Load Imped ance

S

DL

2/16

PD57002 - PD57002S

Id (A)

TYPICAL PERFORMANCE
Capacitances vs.Drain Voltage Drain Current vs Gate-Source Voltage

C (pF)

100

0.25

0.2

10

1

0.1
0 5 10 15 20 25 30

Ciss

Coss

Crss

Vdd (V)

Gate-Source Voltage vs Case Temperature

Vgs (Normalized)

1.05

1.025

1

0.975

0.95

Id = 200 mA

Id = 150 mA

Id = 100 mA

Id = 50 mA

0.15

0.1

0.05

0

22.533.544.555.56

Vgs (V)

0.925

0.9

-50 -25 0 25 50 75 100 125

Tc (°C)

Vds = 10V

3/16

PD57002 - PD57002S

Eff (%)

Eff (%)

IRL (dB)

TYPICAL PERFORMANCE (PD57002S)

Output Power vs Input Power

Pout (W)

2.5

945 MHz

2

925 MHz

Input Return Loss vs Output Power

0

-5

1.5

1

0.5

0

0 0.01 0.02 0.03 0.04 0.05 0.06 0.07

960 MHz

Pin (W)

Power Gain vs Output Power

Pg (dB)

18

17

945 MHz

16

960 MHz

15

14

13

12

925 MHz

Vdd = 28V

Idq = 15mA

-10

-15

-20

-25

-30

960 MHz

945 MHz

925 MHz

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25

Pout (W)

Efficiency vs. Output Power

55

50

45

40

35

30

25

945 MHz

925 MHz

960 MHz

Vdd = 28V

Idq = 15mA

11

10

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25

Pout (W)

Output Power vs Drain Current

Pout (W)

3

2.5

2

1.5

1

0.5

0

0 25 50 75 100 125 150 175

4/16

925 MHz

960 MHz

Idq (mA)

Vdd = 28V

Idq = 15mA

945 MHz

Pin = 17.4dBm

Vdd = 28V

20

15

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25

Pout W)

Efficiency vs Drain Current

60

925 MHz

50

960 MHz

40

30

20

10

0 25 50 75 100 125 150 175

Idq (mA)

Vdd = 28V

Idq = 15mA

945 MHz

Pin = 17.4dBm

Vdd = 28V

PD57002 - PD57002S

Nd (%)

TYPICAL PERFORMANCE (PD57002S)
Output Power vs Drain Voltage Efficiency vs Drain Voltage

Pout (W)

2.5

1.5

945 MHz

2

1

925 MHz

960 MHz

60

50

40

30

945 MHz

960 MHz

925 MHz

0.5

0

10 12.5 15 17.5 20 22.5 25 27.5 30

Pin = 17.4dBm

Vdd (V)

Output Power vs Gate-Source Voltage

Pout (W)

2.5

2

1.5

1

0.5

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

945 MHz

925 MHz

960 MHz

Pin = 17.4dBm

Vgs (V)

Idq = 15mA

Vdd = 28V

20

10

10 12.5 15 17.5 20 22.5 25 27.5 30

Pin = 17.4dBm

Idq = 15mA

Vdd (V)

5/16