SGS Thomson Microelectronics PD55035S Datasheet
PD55035
PD55035S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 35 W with 16.9 dB gain @ 500 MHz /
OUT
12.5 V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55035 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD 55035 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD pla stic
RF power package, PowerSO-10RF . PD55035’s
superior linearity performance makes it an ideal
solution for car mobile radio.
The LdmoST
PowerSO-10RF
(formed lead)
ORDER CODE
PD55035
Plastic FAMILY
BRANDING
PD55035
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SM D package. I t has b een
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
ORDER CODE
PD55035S
PowerSO-10R F
(straight lead)
BRANDING
PD55035S
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 165 °C
T
STG
Drain-Source Voltage 40 V
Gate-Source Voltage ± 20 V
Drain Current 7 A
Power Dissipation (@ Tc = 70°C) 95 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 1.0 °C/W
1/14March, 21 2003
PD55035 - PD55035S
ELECTRICAL SPECIFICATION (T
CASE
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
C
C
C
FS
ISS
OSS
RSS
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V
= 100 mA
ID
VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
VGS = 0 V VDS = 12.5 V f = 1 MHz
VGS = 0 V VDS = 12.5 V f = 1 MHz
VGS = 0 V VDS = 12.5 V f = 1 MHz
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
P
out
G
P
η
D
Load
mismatch
VDD = 12.5 V IDQ = 200 mA f = 500 MHz
VDD = 12.5 V IDQ = 200 mA P
VDD = 12.5 V IDQ = 200 mA P
= 12.5 V IDQ = 200 mA P
V
DD
ALL PHASE ANGLES
°
= 25
C)
= 35 W f = 500 MHz
OUT
= 35 W f = 500 MHz
OUT
= 35 W f = 500 MHz
OUT
1 µA
1 µA
2.0 5.0 V
0.8 0.95 V
2.5 mho
92 pF
73 pF
6.1 pF
35 W
13 16.9 dB
62 %
20:1 VSWR
GATE
SC15200
PIN CONNECTION
PD55035S
SOURCE
DRAIN
SC13140
IMPEDANCE DATA
Z
FREQ. MHz
175 3.34 - j 5.84 1.67 + j 1.45
480 0.53 - j 1.08 0.86 + j 0.25
500 0.45 - j 1.21 1.05 + j 0.03
(Ω)Z
IN
Typical Input
Impeda nce
G
Zin
(Ω)
DL
D
Z
Typical Drain
Load Imped ance
S
DL
2/14
520 0.42 - j 1.20 1.04 + j 0.15
TYPICAL PERFORMANCE
Capacitance vs.Supply Voltage
1000
(PD55035S)
PD55035 - PD55035S
Drain Current vs. Gate-Surce Voltage
8
Vds = 10 V
7
100
C (pF)
10
f = 1 MHz
1
0 4 8 12 16 20 24 28
Ciss
Coss
Crss
Vdd (V)
Gate-Source Voltage vs. Case Temperature
1.02
1.01
1
0.99
Vgs (normalized)
ID = 6 A
ID = 5 A
ID = 4 A
ID = 3 A
6
5
4
Id (A)
3
2
1
0
123456
Vgs (V)
Output Power vs. Input Power
45
40
35
30
25
520 MHz
20
Pout (W)
15
480, 500 MHz
0.98
0.97
-25 0 25 50 75 100
Tc (°C)
ID = 2 A
Power Gain vs. Output Power
24
22
20
18
Gp (dB)
16
14
12
10
0 1020304050
480, 500 MHz
520 MHz
Pout (W)
Vdd = 12.5 V
Idq = 200 mA
10
5
0
0 0 . 2 5 0.5 0 . 7 5 1 1.2 5 1.5
Pin (W)
Vdd=12.5 V
Idq = 200 mA
Efficiency vs. Output Power
70
60
50
40
Nd (%)
30
20
10
0 1020304050
Pout (W )
480 MHz
520 MHz
500 MHz
Vdd = 12.5 V
Idq = 200 mA
3/14
PD55035 - PD55035S
TYPICAL PERFORMANCE
Input Return Loss vs. Output Power
0
Vdd =12.5 V
Idq = 200 mA
-5
-10
-15
RL (dB)
-20
-25
-30
0 1020304050
(PD55035S)
520 MHz
500 MHz
480 MHz
Pout (W)
Output Power vs. Bias Current
38
37
36
Pout (W)
35
34
33
0 200 400 600 800 1000
500 MHz
520 MHz
Idq (mA)
480 MHz
Vdd = 12.5 V
Pin = 0.72 W
Efficiency vs. Bias Current
80
70
60
50
Nd (%)
40
30
20
10
0 200 400 600 800 1000
500 MHz
480, 520 MHz
Idq (mA)
Efficiency vs. Supply Voltage
80
70
60
50
(%)
40
Nd
30
20
10
0
6 8 10 1 2 14 16 18
Vdd (V)
Vdd = 12.5 V
Pin = 0.72 W
520 MHz
500 MHz
Idq = 200 mA
Pin = 0.72 W
480 MHz
Output Power vs. Supply Voltage
60
50
40
30
Pout (W)
20
10
0
6 8 10 12 14 16 18
Vdd (V)
Output Power vs. Gate Voltage
45
40
35
30
25
Pout (W)
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Vgs (V )
520 MHz
500 MHz
Idq = 200 mA
Pin = 0.72 W
Vdd = 12.5 V
Pin = 0.72 W
480 MHz
520
500
480 MHz
4/14
500 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING)
PD55035 - PD55035S
VGG
VGG
VGG
+
+
+
+
+
C10
C10
C10
INPUT
INPUT
INPUT
RF
RF
RF
C9
C9
C9
C8
C8
Z1 Z3
Z1 Z3
Z1 Z3
C1
C1
C2
C2
C2
R3
R3
R3
Z2
Z2
Z2
C3
C3
C3
B1
B1
B1
R2
R2
C7
R1
R1
C4
C4
C4
C5
C5
C5
C7
DUT
DUT
Z4
Z4
C6
C6
C6
DUT
C19
C19
L1
L1
Z5
Z5
Z6
Z6
C11
C11
C12
C12
C12
B2
B2
C18 C17 C16
C18 C17 C16
C15
C15
Z9
Z9
Z9
C14
C14
C14
C15
N2
N2
N2
OUTPUT
OUTPUT
OUTPUT
RF
RF
RF
Z8
Z8
Z8
Z7
Z7
Z7
C13
C13
C13
500 MHz TEST CIRCUIT COMPONENT PART LIST
COMPONENT DESCRIPTIO N
B1,B2 FERRITE BEAD
C1,C13 300 pF, 100 mil CHIP CAPACITOR
C2,C3,C4,C12,C13,C14 1 to 20 pF TRIMMER CAPACITOR
C6 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C7, C19 120 pF 100 mil CHIP CAPACITOR
C10, C16 10 µF, 50 V ELECTROLYTIC CAPACITOR
C9, C17 0.1 mF, 100 mil CHIP CAP
C8, C18 1.000 pF 100 mil CHIP CAP
C5, C11 33 pF, 100 mil CHIP CAP
L1 56 nH, 7 TURN, COILCRAFT
N1, N2 TYPE N FLANGE MOUNT
R1 15 Ω, 1 W CHIP RESISTOR
R2 1 kΩ, 1 W CHIP RESISTOR
R3 33 kΩ, 1 W CHIP RESISTOR
Z1 0.471” x 0.080” MICROSTRIP
Z2 1.082” x 0.080” MICROSTRIP
Z3 0.372” x 0.080” MICROSTRIP
Z4,Z5 0.260” x 0.223” MICROSTRIP
Z6 0.050” x 0.080” MICROSTRIP
Z7 0.551” x 0.080” MICROSTRIP
Z8 0.825” x 0.080” MICROSTRIP
Z9 0.489” x 0.080” MICROSTRIP
BOARD
ROGER, ULTRA LAM 2000 THK 0.030”,
εr = 2.55 2oz. ED Cu 2 SIDES.
VDD
VDD
5/14
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