SGS Thomson Microelectronics PD55025S Datasheet

PD55025

PD55025S

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 25 W with 14.5 dB gain @ 500 MHz /

OUT

12.5 V

• NEW RF PLASTIC PACKAGE
DESCRIPTION

The PD55025 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD 55025 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD pla stic
RF power package, PowerSO-10RF . PD55025’s
superior linearity performance makes it an ideal
solution for car mobile radio.

The LdmoST

PowerSO-10RF

(formed lead)

ORDER CODE

PD55025

Plastic FAMILY

BRANDING

PD55025

The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SM D package. I t has b een
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.

ORDER CODE

PD55025S

PowerSO-10R F

(straight lead)

BRANDING

PD55025S

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 165 °C

T

STG

Drain-Source Voltage 40 V
Gate-Source Voltage ± 20 V
Drain Current 7 A
Power Dissipation (@ Tc = 70°C) 79 W

Storage Temperature -65 to +150 °C

CASE

= 25°C)

THERMA L D ATA

R

th(j-c)

Junction -Case Thermal Resistance 1.2 °C/W

1/13March, 21 2003

PD55025 - PD55025S

ELECTRICAL SPECIFICATION (T

CASE

= 25°C)

STATIC

Symbol Test Conditions Min. Typ. Max. Unit

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

G

C
C
C

FS

ISS
OSS
RSS

VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V

= 100 mA

ID

VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
VGS = 0 V VDS = 12.5 V f = 1 MHz
VGS = 0 V VDS = 12.5 V f = 1 MHz
VGS = 0 V VDS = 12.5 V f = 1 MHz

1 µA
1 µA

2.0 5.0 V

0.7 0.8 V

2.5 mho
86 pF
76 pF

5.8 pF

DYNAMIC

Symbol Test Conditions Min. Typ. Max. Unit

P

out

G

P

η

D

Load

mismatch

VDD = 12.5 V IDQ = 200 mA f = 500 MHz
VDD = 12.5 V IDQ = 200 mA P
VDD = 12.5 V IDQ = 200 mA P

= 12.5 V IDQ = 200 mA P

V

DD

= 25 W f = 500 MHz

OUT

= 25 W f = 500 MHz

OUT

= 25 W f = 500 MHz

OUT

ALL PHASE ANGLES

25 W

14.5 dB
50 %

20:1 VSWR

GATE

SC15200

PIN CONNECTION

PD55025S

SOURCE

DRAIN

SC13140

IMPEDANCE DATA

Z

FREQ. MHz

175 3.20 - j 4.41 1.56 + j 2.14
480 1.01 - j 1.67 1.06 + j 0.22
500 0.93 - j 1.53 1.12 + j 0.20

(Ω)Z

IN

Typical Input
Impeda nce

G

Zin

(Ω)

DL

D

Z

Typical Drain
Load Imped ance

S

DL

2/13

520 0.88 - j 1.98 1.07 + j 0.83

TYPICAL PERFORMANCE

q

Capacitance vs. Supply Voltage

1000

Ciss

100

Coss

C (pF)

(PD55025S)

PD55025 - PD55025S

Drain Current vs Gate-Source Voltage

6

Vds = 10 V

5

4

3

Id (A)

10

Crss

f = 1 MHz

1

0 4 8 1216202428

Vds (V)

Gate-Source Voltage vs Case Temperature

1.04

1.02
Id = 5 A

1.00

Id (A)

0.98

0.96

Vds = 10 V

0.94

-25 0 25 50 75 100
Vgs (V)

Id = 4 A

Id = 3 A

Id = 2 A
Id = 1 A

Id = .5 A

2

1

0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Vgs (V)

Output Power vs Input Power

45

40

35

30

25

20

Pout (W)

15

10

5

0

0.00 1.00 2.00 3.00 4.00 5.00 6.00

480 MH z

Pin (W)

500 MHz

520 MHz

Vdd = 12.5 V
Id

= 200 mA

Output Power vs Input Power

45

40

35

30

25

20

Pout (W)

15

10

Vdd = 13.8 V

Vdd = 12 .5 V

5

0

0123456

Pin (W)

f = 520 MHz
Idq = 200 mA

Powe r Ga i n vs Outpu t Pow er

18

16

14

12

10

Gp (dB)

8

6

4

2

0

0 1020304050

Pout (W)

520 MHz

Vdd = 12.5 V
Idq = 200 mA

480 MHz

500 MHz

3/13

PD55025 - PD55025S

TYPICAL PERFORMANCE
Drain Efficiency vs Output Power

(PD55025S)

Input Return Loss vs Output Power

70

60

50

40

Nd (%)

30

20

10

0

0 1020304050

500 MHz

480, 520 MHz

Pout (W)

Vdd = 12.5 V
Idq = 200 mA

Output Power vs Bias Curent

40

35

30

25

20

Pout (W)

15

10

5

0

0 200 400 600 800 100 0 1200

Idq (m A)

480 MHz

520 MHz

Vdd = 12.5 V
Pin = 0.85 W

500 MHz

0

-5

-10

-15

-20

RL (dB)

-25

-30

-35

-40
0 1020304050

480 MHz

500 MHz

520 MHz

Pout (W)

Vdd = 12.5 V
Idq = 200 mA

Drain Efficiency vs Bias Current

60

50

40

30

Nd (%)

20

10

0

0 200 400 600 800 1000 1200

Idq ( m A)

500 MHz

520 MHz

Vdd = 12.5 V
Pin = 0 . 85 W

480 MH z

Output Power vs Supply Voltage

35

30

25

20

Pout (W)

15

10

5

0

5 7 9 1113151719

Vdd ( V)

4/13

520 MHz

480 MHz

500 MHz

I dq = 200 mA
Pin = 0.85 W

Drain Efficiency vs Supply Voltage

70

60

50

40

Nd (%)

30

20

10

0

6 8 10 12 14 16 18

500 MHz

500 MHz

520 MHz

Vdd (V)

Idq = 200 mA
Pin = 0.85 W