SGS Thomson Microelectronics PD55015 Datasheet
PD55015 - PD55015S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 15 W with 13.5 dB gain @ 500 MHz /
12.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55015 is acommon source N-Channel, enhancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12V in common source mode at frequencies of
up to 1GHz. PD55015 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55015’s superior linearity performance makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
The
LdmoST
Plastic FAMILY
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD55015
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD55015S XPD55015S
PRELIMINARY DATA
XPD55015
ABSOLUTE MAXIMUM RATINGS(T
Symbol Parameter Value Unit
V
(BR)DSS
V
I
P
DISS
T
T
STG
GS
D
Drain Source Voltage 40 V
Gate-Source Voltage ±20 V
Drain Current 5 A
Power Dissipation (@ Tc= 700C)
Max. Operating Junction Temperature 165 0
j
Storage Temperature -65 to 165 0
CASE
=25OC)
73 W
THERMAL DATA
R
th(j-c)
May 2000
Junction-Case Thermal Resistance 1.3
0
C/W
C
C
1/10
PD55015 - PD55015S
ELECTRICAL SPECIFICATION(T
CASE
=250C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
C
C
OSS
C
RSS
FS
ISS
VGS=0V VDS=28V
VGS=20V VDS=0V
VDS=10V ID= 150 mA
VGS=10V ID= 2.5 A
2.0 5.0 V
1 µA
1 µA
0.8 V
VDS=10V ID= 2.5 A 2.0 2.5 mho
VGS=0V VDS= 12.5 V f = 1 MHz
89 pF
VGS=0V VDS= 12.5 V f = 1 MHz 60 pF
VGS=0V VDS= 12.5 V f = 1 MHz
6.5 pF
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
P
OUT
G
PS
η
D
LOAD
Mismatch
f = 500 MHz VDD= 12.5 V IDQ=150mA
f = 500 MHz VDD= 12.5 V P
f = 500 MHz VDD= 12.5 V P
f = 500 MHz V
= 15.5 V P
DD
=15W IDQ=150mA
OUT
=15W IDQ=150mA
OUT
=15W IDQ=150mA
OUT
ALL PHASE ANGLES
15 W
13.5 dB
50
20:1 VSWR
%
SC15200
PD55015
Frequency
MHz
480 2.13 - j1.09 1.55 + j.34
500 1.95 - j.31 1.63 - j.25
520 1.83 - j.70 1.43 + j.30
2/10
PIN CONNECTION
Zin
Ω
SOURCE
DRAINGATE
IMPEDANCE DATA
PD55015S
Zdl
Ω
D
Z
DL
G
Zin
SC13140
Frequency
MHz
Typical Input
Impedance
S
Zin
Ω
Typical Drain
Load Impedance
480 1.43 - j1.27 1.47 + j.65
500 1.62 - j1.05 1.49 + j.58
520 1.57 - j.91 1.35 +j.36
Zdl
Ω
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
PD55015 - PD55015S
Drain Current vs. Gate Voltage
1000
100
Cis s
Coss
10
C, CAPACITANCE (pF)
Crss
f=1MHz
1
0 5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Gate-Source Volatge vs. Case Temperature
1.04
1.02
I
D
=3A
4
3.5
3
2.5
2
1.5
Id, DRAIN CURRENT (A)
1
0.5
0
2.5 3 3.5 4 4.5 5
Vgs, GATE-SOURCE VOLTAGE (V)
VDS=10V
1
0.98
V
DS=10V
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
0.96
-25 0 25 50 75
ID= .25A
Tc, CASE TEMPERATURE (°C)
I
D=2A
I
D
I
D=1A
=1.5A
3/10
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