SGS Thomson Microelectronics PD55008 Datasheet
1/10
PRELIMINARY DATA
May 2000
PD55008 - PD55008S
RF POWER TRANSISTORS
The
LdmoST
Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 17 dB gain @ 500 MHz /
12.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55008 is acommon source N-Channel, enhancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12V in common source mode at frequencies of
up to 1GHz. PD55008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55008’s superior linearity performance makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
XPD55008
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD55008
PD55008S XPD55008S
ABSOLUTE MAXIMUM RATINGS(T
CASE
=25OC)
Symbol Parameter Value Unit
V
(BR)DSS
Drain Source Voltage 40 V
V
GS
Gate-Source Voltage ±20 V
I
D
Drain Current 4 A
P
DISS
Power Dissipation (@ Tc= 700C)
52.8 W
T
j
Max. Operating Junction Temperature 165
O
C
T
STG
Storage Temperature -65 to 165
O
C
THERMAL DATA
R
th(j-c)
Junction-Case Thermal Resistance 1.8 O
C/W
PD55008 - PD55008S
2/10
PD55008S
Frequency
MHz
Zin
Ω
Zdl
Ω
520 1.586 - j2.087 3.082 + j2.043
500 1.409 - j3.448 2.129 + j3.219
480 1.075 - j2.727 2.046 +j1.960
PIN CONNECTION
SOURCE
DRAINGATE
SC15200
ELECTRICAL SPECIFICATION(T
CASE
=250C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
I
DSS
VGS=0V VDS=28V
1 µA
I
GSS
VGS=20V VDS=0V
1 µA
V
GS(Q)
VDS=10V ID= 150 mA
2.0 5.0 V
V
DS(ON)
VGS=10V ID= 1.5 A
1.0 V
g
FS
VDS=10V ID= 1.5 A 1.6 mho
C
ISS
VGS=0V VDS= 12.5 V f = 1 MHz
58 pF
C
OSS
VGS=0V VDS= 12.5 V f = 1 MHz 39 pF
C
RSS
VGS=0V VDS= 12.5 V f = 1 MHz
2.6 pF
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
P
OUT
f = 500 MHz VDD= 12.5 V IDQ=150mA
8W
G
PS
f = 500 MHz VDD= 12.5 V P
OUT
=8W IDQ= 150 mA
17 dB
η
D
f = 500 MHz VDD= 12.5 V P
OUT
=8W IDQ= 150 mA
55
%
LOAD
Mismatch
f = 500 MHz V
DD
= 15.5 V P
OUT
=8W IDQ= 150 mA
ALL PHASE ANGLES
20:1 VSWR
PD55008
Frequency
MHz
Zin
Ω
Zdl
Ω
520 1.649 - j1.965 1.716 - j1.552
500 1.589 - j1.185 1.561 - j2.639
480 1.141 - j2.054 1.649 - j2.916
D
S
Typical Input
Impedance
Zin
G
Z
DL
Typical Drain
Load Impedance
SC13140
IMPEDANCE DATA
3/10
PD55008 - PD55008S
Capacitance vs. Drain Voltage
0 5 10 15 20 25
VDD, DRAIN VOLTAGE (V)
1
10
100
1000
C, CAPACITANCES (pF)
Ciss
Coss
Crss
f=1MHz
Drain Current vs. Gate Voltage
123456789
VGS, GATE-SOURCE VOLTAGE (V )
0
1
2
3
4
5
6
7
8
Id, DRAIN CURRENT (A)
VDS=10V
Gate-Source vs. Case Temperature
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (°C)
0.92
0.94
0.96
0.98
1
1.02
1.04
1.06
VGS, GATE-SOURCE VOLTAGE(NORMALIZED)
ID=.25A
I
D
=.5A
ID=1A
I
D
=2A
I
D=1.5A
V
DS
=10V
TYPICAL PERFORMANCE
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