Mode E G W DQ0 - DQ7
Read V
IL
V
IL
V
IH
Data Out
Write V
IL
V
IH
V
IL
Data In
Standby / Write Inhibit V
IH
X X Hi-Z
Write Inhibit X X V
IH
Data Out or Hi-Z
Write Inhibit X V
IL
X Data Out or Hi-Z
Output Disable X V
IH
X Hi-Z
Notes: 1. X = VIHor V
IL.
Table3. Operating Modes
(1)
The devices offer fast access timewith low power
dissipationand requires a 5V or 3Vpower supply.
The circuit has been designed to offer a flexible
microcontroller interface featuring both hardware
and software handshaking with Data Polling and
Toggle Bit and access to a status register. The
devicessupport a 64 byte page write operation.A
Software Data Protection (SDP) is also possible
using the standardJEDECalgorithm.
PIN DESCRIPTION
Addresses (A0-A14).
The address inputs select
an 8-bit memory location during a read or write
operation.
Chip Enable (E).
The chip enable input must be
lowto enableall read/writeoperations.When Chip
Enableis high, power consumptionis reduced.
OutputEnable (G).
The Output Enable input controls the dataoutput buffers and is usedto initiate
readoperations.
DataIn/ Out(DQ0-DQ7).
Datais writtento orread
fromthe memorythrough the I/O pins.
WriteEnable(W).
TheWriteEnable inputcontrols
the writingof datato thememory.
OPERATIONS
WriteProtection
In orderto preventdata corruptionand inadvertent
writeoperations;an internalV
CC
comparatorinhib-
its Write operationsif V
CC
is below VWI (see Table
7andTable9).Accesstothememoryinwrite mode
is allowed after a power-upas specifiedin Table7
and Table 9.
Read
Thedevice is accessedlike a staticRAM. WhenE
and G are low with W high, the data addressedis
presented on the I/O pins. The I/O pins are high
impedancewhen either G or E is high.
Write
Writeoperations are initiated when both W and E
are low and G is high.Thedevice supportsboth E
and W controlled write cycles. The Address is
latched by the falling edge of E or W which ever
occurslast and the Data on the risingedge of E or
W which ever occurs first. Once initiated the write
operation is internally timed until completion and
the status of the Data Polling and the Toggle Bit
functions on DQ7 and DQ6 is controlled accordingly.
Page Write
Page write allows up to 64 bytes within the same
page to be consecutivelylatched into the memory
prior to initiating a programming cycle. All bytes
must be located in a single page address, that is
A14-A6 mustbe the same forall bytes;if not,the
Page Write instruction is not executed. The page
writecan be initiatedby any byte write operation.
A page write is composed of successive Write
instructions which have to be sequenced with a
specific period of time between two consecutive
Write instructions, period of time which has to be
smaller than the t
WHWH
value (see Table 12 and
Table13).
If thisperiod of time exceedsthet
WHWH
value, the
internalprogrammingcycle will start.Onceinitiated
thewrite operationis internallytimed until completion and the status of the Data Polling and the
ToggleBit functionson DQ7and DQ6 is controlled
accordingly.
DESCRIPTION
(Cont’d)
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M28256