SGS Thomson Microelectronics M27W256 Datasheet

M27W256

256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V SUPPLY VOLTAGEin READ

OPERATION

■ ACCESS TIME:

–70nsatVCC= 3.0V to 3.6V –80nsatVCC= 2.7V to 3.6V

■ PIN COMPATIBLE with M27C256B

■ LOW POWER CONSUMPTION:

–15µA max Standby Current – 15mA max Active Currentat 5MHz

■ PROGRAMMING TIME 100

■ HIGH RELIABILITY CMOS TECHNOLOGY

s/byte

µ

– 2,000V ESDProtection – 200mA Latchup Protection Immunity

■ ELECTRONIC SIGNATURE

– Manufacturer Code:20h – Device Code: 3Dh

DESCRIPTION

The M27W256 is a low voltage 256 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems and is organized as 32,768 by 8 bits.

The M27W256 operates in the read mode with a supply voltage as low as 3V. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges.

The FDIP28W (windowceramic frit-seal package) has a transparent lid which allows the user to expose thechipto ultraviolet light to erase thebit pattern. A new pattern can then be written to the device by following the programming procedure.

For applications wherethe contentis programmed only one time and erasure is not required, the M27W256 is offered in PDIP28, PLCC32 and TSOP28 (8 x13.4 mm) packages.

28

1

FDIP28W (F) PDIP28 (B)

PLCC32 (K) TSOP28 (N)

Figure 1. Logic Diagram

V

15

A0-A14 Q0-Q7

E

G

V

28

V

CC

M27W256

SS

1

8 x 13.4mm

PP

8

AI03629

1/15March 2000

M27W256

Figure 2A. DIP Connections

V

1

PP

A12

2

A7

3

A6

4

A5

5

A4

6

A3

7 A2 A1 A0

Q0

Q2 SS

M27W256

8

9

10

11

12

13

14

28 27 26 25 24 23 22 21 20 19 18 17 16 15

AI03627

V

CC

A14 A13 A8 A9 A11 G A10 E Q7 Q6 Q5Q1 Q4 Q3V

Figure 2B. LCC Connections

PP

V

A6 A5 A4 A3 A2 A1 A0

NC

Q0

A7

9

Q1

DU

A12

1

32

M27W256

17

Q2

SS

DU

V

Q3

CC

A14

Q4

A13

25

Q5

A8 A9 A11 NC G A10 E Q7 Q6

AI03626

Figure 2C. TSOP Connections

G

22

A11

A9

A8 A13 A14

V

A12

CC

PP

A7

A6

A5

A4

A3

28

M27W256

1

78

21

15 14

AI03628

A10 E Q7 Q6 Q5 Q4 Q3 V

SS

Q2 Q1 Q0 A0 A1 A2

Table 1. Signal Names

A0-A14 Address Inputs Q0-Q7 Data Outputs E Chip Enable G Output Enable V

PP

V

CC

V

SS

NC Not Connected Internally DU Don’t Use

Program Supply Supply Voltage Ground

2/15

M27W256

Table 2. Absolute Maximum Ratings

(1)

Symbol Parameter Value Unit

T

A

T

BIAS

T

STG

(2)

V

IO

V

CC

(2)

V

A9

V

PP

Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may

cause permanent damage to the device.These are stressratings only and operationof the device atthese or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Referalso to the STMicroelectronics SURE Program andother relevant quality documents.

2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC voltage on Output is V

3. Depends on range.

Ambient Operating Temperature Temperature Under Bias –50 to 125 °C Storage Temperature –65 to 150 °C

Input or Output Voltage (except A9) –2 to 7 V Supply Voltage –2 to 7 V A9 Voltage –2 to 13.5 V Program Supply Voltage –2 to 14 V

+0.5V with possible overshoot to VCC+2V for a period less than 20ns.

CC

(3)

–40 to 125 °C

Table 3. Operating Modes

Mode E G A9

Read Output Disable V Program

V Verify V Program Inhibit Standby Electronic Signature

Note: X = VIHor VIL,VID= 12V ± 0.5V.

V

IL

Pulse V

IL

IH

V

IH

V

IH

V

IL

V

IL

V

IH

V

IL

V

IH

X XVCCHi-Z X XVPPData Out X

XX

V

IL

V

ID

V

PP

V

CC

V

PP

V

PP

V

CC

V

CC

Data Out

Q7-Q0

Data In

Hi-Z Hi-Z

Codes

Table 4. Electronic Signature

Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data

Manufacturer’s Code Device Code

V

IL

V

IH

00100000 20h 10001101 8Dh

3/15

M27W256

Table 5. AC Measurement Conditions

High Speed Standard

Input Rise and Fall Times ≤ 10ns ≤ 20ns Input Pulse Voltages 0 to 3V 0.4V to 2.4V Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V

Figure 3. AC Testing Input Output Waveform

High Speed

3V

1.5V

0V

Standard

2.4V

0.4V

Table 6. Capacitance

Symbol Parameter Test Condition Min Max Unit

C

IN

C

OUT

Note: 1. Sampled only,not 100% tested.

Input Capacitance Output Capacitance

(1)

(TA=25°C, f = 1 MHz)

2.0V

0.8V

AI01822

Figure 4. AC Testing Load Circuit

1.3V

1N914

3.3kΩ

DEVICE UNDER

TEST

C

L

CL= 30pF for HighSpeed CL= 100pF for Standard CLincludes JIG capacitance

V

IN

OUT

=0V

6pF

12 pF

OUT

AI01823B

DEVICE OPERATION

The modesof operationoftheM27W256 are listed in the Operating Modes. A single power supply is required in the read mode. All inputs are TTL levels except for VPPand 12V on A9 for Electronic Signature.

Read Mode

The M27W256 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable(G) is the output controland should be used to gate data to the output pins, indepen-

4/15

dent of device selection. Assuming that the addresses are stable, the address access time (t

) is equal to the delay from E to output

AVQV

(t

). Data is available at the output after delay

ELQV

of t

from the falling edge of G, assuming that

GLQV

E has been lowand the addresses havebeen stable forat least t

AVQV-tGLQV

.

Standby Mode

The M27W256 has a standby mode which reduces the supply current from 10mA to 10µA with low voltage operation VCC≤ 3.6V, see Read ModeDC Characteristics table for details. The M27W256 is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input.

M27W256

Table 7. Read Mode DC Characteristics

(1)

(TA= –40to 85°C; VCC= 2.7V to 3.6V; VPP=VCC)

Symbol Parameter Test Condition Min Max Unit

I

CC

I

CC1

I

CC2

I V

V

IH

V

Note: 1. VCCmust be applied simultaneously with orbefore VPPand removed simultaneously orafter VPP.

Input Leakage Current

LI

Output Leakage Current

LO

0V ≤ V

E=V

Supply Current

I

OUT

Supply Current (Standby) TTL

Supply Current (Standby) CMOS

Program Current

PP

Input Low Voltage –0.6

IL

(2)

Input High Voltage Output Low Voltage

OL

Output High Voltage TTL

OH

2. Maximum DC voltage on Output is V

CC

+0.5V.

E>V

I

≤ V

IN

CC

≤ V

OUT

CC

,G=VIL,

IL

= 0mA, f = 5MHz,

≤ 3.6V

V

CC

E=V

IH

– 0.2V,

CC

V

≤ 3.6V

CC

V

PP=VCC

I

= 2.1mA

OL

= –400µA

OH

±10 µA ±10 µA

15 mA

1mA

15 µA

100 µA

0.2 V

CC

0.7 V

CCVCC

+ 0.5

0.4 V

2.4 V

V V

Table 8. Read Mode AC Characteristics

(1)

(TA= –40to 85°C; VCC= 2.7V to 3.6V; VPP=VCC)

M27W256

(3)

Symbol Alt Parameter

Test

Condition

VCC= 3.0V to 3.6V VCC= 2.7V to 3.6V VCC= 2.7V to 3.6V

Min Max Min Max Min Max

E=V

G=V

E=V

G=V

E=V

G=V

,

IL

0 40 0 50 0 60 ns

,

000ns

t

AVQV

t

ELQV

t

GLQV

(2)

t

EHQZ

(2)

t

GHQZ

t

AXQX

Note: 1. VCCmust be applied simultaneously with orbefore VPPand removed simultaneously orafter VPP.

2. Sampled only, not 100% tested.

3. Speed obtained with High Speed AC measurement conditions.

Address Valid to

t

ACC

Output Valid Chip EnableLow to

t

CE

Output Valid Output Enable Low

t

OE

to Output Valid Chip Enable High

t

DF

to Output Hi-Z Output EnableHigh

t

DF

to Output Hi-Z Address Transition

t

OH

to Output Transition

-80

70 80 100 ns

40 50 60 ns

-100

(-120/-150/-200)

Unit

5/15