SGS Thomson Microelectronics M27W202 Datasheet

M27W202
2 Mbit (128Kb x16) Low Voltage UV EPROM and OTP EPROM
2.7V to 3.6V SUPPLY VOLTAGE in READ
OPERATION
ACCESS TIME:
–80nsatVCC= 3.0V to 3.6V – 100ns at VCC= 2.7V to 3.6V
LOW POWER CONSUMPTION:
– Active Current 20mA at 5MHz – Standby Current 15µA
PIN COMPATIBLE with M27C202
PROGRAMMING TIME: 100µs/word
HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection – 200mA Latchup Protection Immunity
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h – Device Code: 001Ch
DESCRIPTION
The M27W202 is a low voltage 2 Mbit EPROM of­fered in the two range UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is organised as 131,072 by 16 bits.
The M27W202 operates in the read mode with a supply voltage as low as 2.7V at –40 to 85°C tem­perature range. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery re­charges.
The FDIP40W (window ceramic frit-seal package) has a transparent lid which allows the user to ex­pose the chip to ultraviolet lightto erase thebitpat­tern. A new pattern can then be written to the device by following the programming procedure.
For application where the content is programmed only one time and erasure is not required, the M27W201 is offered in PDIP40, PLCC44 and TSOP40 (10 x 14 mm) packages.
40
1
FDIP40W (F)
PLCC44 (K) TSOP40 (N)
Figure 1. Logic Diagram
V
CC
17
A0-A16
P
E
G
M27W202
V
SS
40
V
PP
1
PDIP40(B)
10x 14 mm
16
Q0-Q15
AI02730
1/15April 2000
M27W202
Figure 2A. DIP Connections
V
1
PP
2
Q15
3 4
Q14
5
Q13 Q12
6
Q11
7
Q10
8
Q9
9
Q8
10
V
SS Q7
Q6 Q5 Q4 Q3 Q2
Q0
M27W202
11 12 13 14 15 16 17 18 19
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 2120
AI02731
V
CC
PE A16 A15 A14 A13 A12 A11 A10 A9 V
SS
A8 A7 A6 A5 A4 A3 A2Q1 A1 A0G
Figure 2B. LCC Connections
Q13
Q14
Q15
CC
NC
VPPE
1
44
P
V
Q12 Q11 Q10
Q9 A10 Q8
V
SS
12
M27W202
NC
Q6 Q5 Q4
23
G
A0
Q3
Q2
Q1
Q0
NC
A1
A16
A2
A15
A3
A14
34
A4
A13 A12 A11
A9 V
SS
NC A8Q7 A7 A6 A5
AI02732
Figure 2C. TSOP Connections
A9
1 A10 A11 A12 A6 A13 A5 A14 A15 A16
P
V
CC
V
PP
E DQ15 DQ14 DQ13 DQ12 DQ4 DQ11 DQ5 DQ10
DQ9 DQ8
M27W202
10
(Normal)
11
20 21
AI02733
40
31 30
V
SS
A8 A7
A4 A3 A2 A1 A0 G DQ0 DQ1 DQ2 DQ3
DQ6 DQ7 V
SS
Table 1. Signal Names
A0-A16 Address Inputs Q0-Q15 Data Outputs E Chip Enable G Output Enable P Program V
PP
V
CC
V
SS
NC Not Connected Internally
Program Supply Supply Voltage Ground
2/15
M27W202
Table 2. Absolute Maximum Ratings
(1)
Symbol Parameter Value Unit
T
A
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi­tions for extended periods may affect device reliability. Referalso to theSTMicroelectronics SURE Program and other relevant qual­ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC voltage on Output is V
3. Depends on range.
Ambient Operating Temperature Temperature Under Bias –50 to 125 °C Storage Temperature –65 to 150 °C
Input or Output Voltage (except A9) –2 to 7 V Supply Voltage –2 to 7 V A9 Voltage –2 to 13.5 V Program Supply Voltage –2 to 14 V
+0.5V with possible overshoot to VCC+2V for a period less than 20ns.
CC
(3)
–40 to 125 °C
Table 3. Operating Modes
Mode E G P A9
Read Output Disable V Program Verify V Program Inhibit Standby Electronic Signature
Note: X = VIHor VIL,VID= 12V ± 0.5V.
V
IL
IL
V
IL
IL
V
IH
V
IH
V
IL
V
IL
V
IH
X
V
IL
V
IH
X
XXV
V
IL
Pulse
V
IH
X
XVPPData Output XXX XXX
V
IL
V
IH
V
ID
V
PP
V
or V
CC
SS
or V
CC
SS
V
PP
V
PP
V
or V
CC
SS
V
CC
Q15-Q0
Data Output
Hi-Z
Data Input
Hi-Z Hi-Z
Codes
Table 4. Electronic Signature
Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code Device Code
Note: Outputs Q15-Q8 are set to ’0’.
V
IL
V
IH
00100000 20h 00011100 1Ch
3/15
M27W202
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times 10ns 20ns Input Pulse Voltages 0 to 3V 0.4V to 2.4V Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V
Figure 3. AC Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
Symbol Parameter Test Condition Min Max Unit
C
IN
C
OUT
Note: 1. Sampled only, not 100% tested.
Input Capacitance Output Capacitance
(1)
(TA=25°C, f = 1 MHz)
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
1N914
3.3k
DEVICE UNDER
TEST
C
L
CL= 30pFfor High Speed CL= 100pF for Standard CLincludes JIG capacitance
V
V
IN
OUT
=0V
=0V
6pF
12 pF
OUT
AI01823B
DEVICE OPERATION
The operating modes of the M27W202 are listed in the Operating Modes table. A single power supply is required in the read mode. All inputs are TTL levels except for VPPand 12V on A9 for Electronic Signature.
Read Mode
The M27W202 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable(G)is the output control and should be used to gate data to the output pins, indepen­dent of device selection. Assuming that the ad­dresses are stable, the address access time
4/15
(t
) is equal to the delay from E to output
AVQV
(t
). Data is available attheoutputaftera delay
ELQV
of tOEfrom the falling edge of G, assuming that E has been low and the addresses have been stable for at leastt
AVQV-tGLQV
.
Standby Mode
The M27W202 has a standby mode which reduc­es the supply current from 15mA to 15µA with low voltage operation VCCâ 3.6V, see Read Mode DC Characteristics table for details.
The M27W202 is placed in the standby mode by applying a TTL high signal to the E input. When in the standbymode,theoutputsarein ahigh imped­ance state, independent of the G input.
M27W202
Table 7. Read Mode DC Characteristics
(1)
(TA= –40 to 85 °C; VCC= 2.7V to 3.6V; VPP=VCC)
Symbol Parameter Test Condition Min Max Unit
I
I
I
CC
I
CC1
I
CC2
I V
V
IH
V
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
PP
Input Low Voltage –0.6
IL
(2)
Input High Voltage Output Low Voltage
OL
Output High VoltageTTL
OH
2. Maximum DC voltage on Output is V
CC
+0.5V.
I
OUT
0V V
0V V
E=V
E>V
I
I
OH
V
IN
CC
V
OUT
IL
= 0mA, f = 5MHz
V
CC
E=V
CC
V
CC
V
PP=VCC
= 2.1mA
OL
= –400µA
CC
,G=VIL,
3.6V
IH
– 0.2V
3.6V
±10 µA ±10 µA
20 mA
1mA
15 µA
10 µA
0.2 V
CC
0.7 V
2.4 V
CC
VCC+ 0.5
0.4 V
V V
Two Line Output Control
Because OTP EPROMs are usually used in larger memory arrays, this product features a 2 line con­trol function which accommodates the use of mul­tiple memory connection. The two line control function allows:
a. the lowest possible memory power dissipation, b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control lines, Eshould be decoded and used as theprima­ry device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system controlbus. This ensures that all deselect­ed memory devices are intheir low power standby mode and that the output pins are only active when data is required from a particular memory device.
System Considerations
The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the devices. The supply current, ICC, has three seg­ments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E. Themagnitudeof transient current peaks is dependent on the ca­pacitive and inductive loading of the device at the output. The associated transient voltage peaks can be suppressed by complying with the two line outputcontroland byproperly selected decoupling capacitors.It is recommended that a 0.1µFceram­ic capacitor be used on everydevice between V
CC
and VSS. This should be a high frequency capaci­tor of low inherent inductance and should be placed as close to the device as possible. In addi­tion, a 4.7µF bulk electrolytic capacitor should be used between VCCand VSSfor every eight devic­es. The bulk capacitor should be located near the power supply connection point.The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.
5/15
Loading...
+ 10 hidden pages