SGS Thomson Microelectronics M27V801 Datasheet

M27V801

8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM

■ LOW VOLTAGEREAD OPERATION:

3V to 3.6V

■ FAST ACCESS TIME: 120ns

■ LOW POWER CONSUMPTION:

– Active Current15mA at 5MHz
– Standby Current 20µA

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

■ PROGRAMMING TIME: 100µs/byte (typical)

■ ELECTRONIC SIGNATURE

– Manufacturer Code:20h
– Device Code: 42h

DESCRIPTION

The M27V801 is a low voltage 8 Mbit EPROM of­fered in the two ranges UV (ultraviolet erase) and
OTP (one time programmable). It is ideally suited
for microprocessorsystems requiringlarge data or
program storageandisorganized as 1,048,576 by
8 bits.

The M27V801 operates in the read mode with a
supply voltage as low as 3V. The decrease in op­erating power allowseither a reduction of the size
of the battery or an increase in the time between
battery recharges.

The FDIP32W (window ceramic frit-seal package)
has transparent lid which allows the user to ex­pose thechipto ultraviolet lightto erase the bit pat­tern. A new pattern can then be written to the
device by followingthe programmingprocedure.

32

1

FDIP32W (F) PDIP32 (B)

PLCC32 (K) TSOP32 (N)

Figure 1. Logic Diagram

20

A0-A19 Q0-Q7

32

1

8 x20 mm

V

CC

8

Table 1. Signal Names

A0-A19 Address Inputs
Q0-Q7 Data Outputs
E Chip Enable
GV
V
V

PP

CC

SS

Output Enable / Program Supply
Supply Voltage
Ground

GV

PP

E

M27V801

V

SS

AI01902

1/16May 1998

M27V801

Figure 2A. DIP Pin Connections

A19 V

A15
A12

A7
A6
A5
A4
A3
A2
A1
A0

Q0

Q2
SS

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

M27V801

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

AI01903

CC

A18A16
A17
A14
A13
A8
A9
A11
GV
A10
E
Q7
Q6
Q5Q1
Q4
Q3V

PP

Figure 2B. PLCC Pin Connections

CC

A17

A19

32

Q3

V

Q4

A18

Q5

25

Q6

A7
A6
A5
A4
A3
A2
A1
A0

Q0

A16

A12

A15

1

9

Q1

Q2

M27V801

17

SS

V

A14
A13
A8
A9
A11
GV
A10
E
Q7

AI01904

PP

Figure 2C. TSOP Pin Connections

A11 GV

A9

A8
A13
A14
A17
A18

V

CC

A19
A16
A15
A12

A7

A6

A5

A4 A3

1

M27V801

8

(Normal)

9

16 17

32

25
24

AI01905

A10
E
Q7
Q6
Q5
Q4
Q3
V

SS

Q2
Q1
Q0
A0
A1
A2

PP

For applications wherethe content is programmed
only one time and erasure is not required, the
M27V801 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.

DEVICE OPERATION

The operating modes of the M27V801 arelisted in
the Operating Modes table.A single power supply
is required in the read mode. All inputs are TTL
levels except for GVPPand 12V on A9 for Elec­tronic Signature and Margin Mode Set or Reset .

Read Mode

The M27V801 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G)is the outputcontroland should
be used to gate data to the output pins, indepen­dent of device selection. Assuming that the ad­dresses are stable, the address access time
(t

) is equal to the delay from E to output

AVQV

(t

). Data is available atthe outputafteradelay

ELQV

of t

from the falling edge of G, assuming that

GLQV

E has been low andthe addresseshavebeen sta­ble for at least t

AVQV-tGLQV

.

2/16

M27V801

Table 2. Absolute Maximum Ratings

(1)

Symbol Parameter Value Unit

T

A

T

BIAS

T

STG

(2)

V

IO

V

CC

(2)

V

A9

V

PP

Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may

cause permanent damage to the device. These are stress ratings only and operation of the device atthese or anyother conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi­tions for extended periodsmay affect device reliability. Refer alsotothe STMicroelectronics SURE Program and otherrelevant qual­ity documents.

2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V

3. Depends on range.

Ambient Operating Temperature
Temperature Under Bias –50 to 125 °C
Storage Temperature –65 to 150 °C

Input or Output Voltage (except A9) –2 to 7 V
Supply Voltage –2 to 7 V
A9 Voltage –2 to 13.5 V
Program Supply Voltage –2 to 14 V

+0.5V with possible overshoot to VCC+2V for a period less than 20ns.

CC

(3)

–40 to 125 °C

Table 3. Operating Modes

Mode E

Read
Output Disable
Program V
Program Inhibit
Standby
Electronic Signature

Note: X = VIHor VIL,VID= 12V ± 0.5V.

V

IL

V

IL

Pulse V

IL

V

IH

V

IH

V

IL

GV

V

PP

V

IL

V

IH
PP
PP

A9 Q0-Q7

X Data Out
X Hi-Z
X Data In
X Hi-Z

X X Hi-Z

V

IL

V

ID

Codes

Table 4. Electronic Signature

Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data

Manufacturer’s Code
Device Code V

V

IL

IH

Standby Mode

The M27V801 has a standby modewhich reduces
the active current from 15mA to 20µA withlowvolt-
age operation VCC≤ 3.6V, see Read Mode DC
Characteristics table for details.The M27V801 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the GVPPinput.

Two Line Output Control

Because EPROMs are usually used in larger
memory arrays, the product features a 2 line con­trol function which accommodates the use of mul­tiple memory connection.

00100000 20h
01000010 42h

The two line control functionallows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention

will not occur.

For the most efficient use of these two control
lines, E should bedecoded andused as theprima­ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect­ed memory devicesare intheir low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.

3/16

M27V801

Table 5. AC Measurement Conditions

High Speed Standard

Input Rise and Fall Times ≤ 10ns ≤ 20ns
Input Pulse Voltages 0 to3V 0.4V to 2.4V
Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V

Figure 3. Testing Input Output Waveform

High Speed

3V

1.5V

0V

Standard

2.4V

0.4V

Table 6. Capacitance

Symbol Parameter Test Condition Min Max Unit

C

IN

C

OUT

Note: 1. Sampled only,not 100% tested.

(1)

(TA=25°C, f = 1 MHz)

Input Capacitance
Output Capacitance V

2.0V

0.8V

AI01822

Figure 4. AC Testing Load Circuit

1.3V

1N914

3.3kΩ

DEVICE

UNDER

TEST

C

L

CL= 30pF for High Speed
CL= 100pF for Standard
CLincludes JIG capacitance

V

=0V

IN

=0V 12 pF

OUT

6pF

OUT

AI01823B

System Considerations

The power switching characteristics of Advanced
CMOS EPROMs requirecareful decoupling ofthe
devices. The supply current, ICC, has three seg­ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the fallingand rising edgesof E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output.

The associated transient voltage peaks can be
suppressed by complying with the two line output

4/16

control and by properly selected decoupling ca­pacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between V

CC

and VSS. This should be a high frequency capaci­tor of low inherent inductance and should be
placed as close to the device aspossible. In addi­tion, a 4.7µF bulk electrolytic capacitor should be
used between VCCand VSSfor every eight devic­es. The bulk capacitor should be located near the
power supply connection point. Thepurposeof the
bulk capacitor is to overcome the voltage drop
caused by the inductive effectsof PCB traces.

M27V801

Table 7. Read Mode DC Characteristics

(1)

(TA= 0 to 70 °Cor –40 to 85 °C; VCC= 3.3V ± 10%)

Symbol Parameter Test Condition Min Max Unit

I

I

I

CC

I

CC1

I

CC2

I
V

V

IH

V

V

Note: 1. VCCmust be applied simultaneously with orbefore VPPand removed simultaneously or after VPP.

Table 8A. Read Mode AC Characteristics

Input Leakage Current

LI

Output Leakage Current

LO

Supply Current

E=V

IL

f = 5MHz, V

0V ≤ V

0V ≤ V

,G=VIL,I

Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current

PP

Input Low Voltage –0.3 0.8 V

IL

(2)

Input High Voltage 2
Output Low Voltage

OL

Output High Voltage TTL

OH

Output High Voltage CMOS

2. Maximum DC voltage on Output is V

CC

+0.5V.

(1)

E>V

CC

I
I

≤ V

IN

CC

≤ V

OUT

CC

= 0mA,

OUT

≤ 3.6V

CC

E=V

IH

–0.2V,VCC≤ 3.6V

V

PP=VCC

I

= 2.1mA

OL

= –400µA

OH

= –100µAV

OH

2.4 V
–0.7V

CC

±10 µA
±10 µA

15 mA

1mA
20 µA
10 µA

V

+1

CC

0.4 V

(TA= 0 to 70 °Cor –40 to 85 °C; VCC= 3.3V ± 10%; VPP=VCC)

M27V801

Symbol Alt Parameter Test Condition

Min Max Min Max

t

AVQV

t

ELQV

t

GLQV

t

EHQZ

t

GHQZ

t

AXQX

Note: 1. VCCmust be applied simultaneously with orbefore VPPand removed simultaneously or after V

2. Sampled only, not 100% tested.

(2)

(2)

t

ACC

t
t

t
t

t

Address Valid to Output Valid
Chip EnableLow to Output Valid

CE

Output Enable Low to Output Valid

OE

Chip EnableHigh to Output Hi-Z

DF

Output Enable High to Output Hi-Z

DF

Address Transition to Output Transition

OH

E=V

E=V

,GVPP=V

IL

GV

PP=VIL

E=V

GV

PP=VIL

E=V

,GVPP=V

IL

IL

120 150 ns
120 150 ns

IL

60 80 ns

050050ns

IL

050050ns
00ns

IL

PP

V

V

Unit-120 -150

5/16